FP40R12KE3 POWER MODULE Datasheet

FP40R12KE3 Datasheet, PDF, Equivalent


Part Number

FP40R12KE3

Description

IGBT POWER MODULE

Manufacture

Eupec

Total Page 11 Pages
Datasheet
Download FP40R12KE3 Datasheet


FP40R12KE3
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP40R12KE3
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
Tvj = 25°C
VRRM
1600
V
Gleichrichter Ausgang Grenzeffektivstrom
maximum RMS current at Rectifier output
TC = 80°C
IRMSmax
60
A
Durchlaßstrom Grenzeffektivwert proChip
Forward current RMS maximum per Chip
Stoßstrom Grenzwert
msurge forward current
Grenzlastintegral
oI2t - value
TC = 80°C
tP = 10 ms,
tP = 10 ms,
tP = 10 ms,
tP = 10 ms,
Tvj = 25°C
Tvj = 150°C
Tvj = 25°C
Tvj = 150°C
.cTransistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tvj = 25°C
UKollektor-Dauergleichstrom
DC-collector current
t4Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Tc = 80 °C
TC = 25 °C
tP = 1 ms,
eGesamt-Verlustleistung
total power dissipation
TC = 25°C
T C = 80 °C
eGate-Emitter-Spitzenspannung
hgate-emitter peak voltage
Diode Wechselrichter/ Diode Inverter
SDauergleichstrom
DC forward current
taPeriodischer Spitzenstrom
repetitive peak forw. current
aGrenzlastintegral
I2t - value
tP = 1 ms
VR = 0V, tp = 10ms, Tvj = 125°C
.DTransistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tvj = 25°C
wKollektor-Dauergleichstrom
DC-collector current
TC = 80 °C
TC = 25 °C
wPeriodischer Kollektor Spitzenstrom
wrepetitive peak collector current
tP = 1 ms, TC = 80°C
IFRMSM
IFSM
I2t
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
VCES
IC,nom.
IC
ICRM
50
315
260
500
340
1200
40
55
80
200
+/- 20V
40
80
320
1200
15
25
30
A
A
A
A2s
A2s
V
A
A
A
W
V
A
A
A2s
V
A
A
A
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
TC = 25°C
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
prepared by: Andreas Schulz
approved by: Robert Severin
date of publication:23.04.2002
revision: 2
1(11)
Ptot
omVGES
t4U.cIF
www.DataSheeIFRM
100
+/- 20V
10
20
W
V
A
A
DB-PIM-IGBT3_2Serie.xls

FP40R12KE3
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP40R12KE3
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
VISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Tvj = 150°C,
Schleusenspannung
threshold voltage
Tvj = 150°C
Ersatzwiderstand
slope resistance
Tvj = 150°C
Sperrstrom
reverse current
Tvj = 150°C,
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
TC = 25°C
I F = 40 A
V R = 1600 V
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
VGE = 15V, Tvj = 25°C, IC = 40 A
VGE = 15V, Tvj = 125°C, IC = 40 A
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE, Tvj = 25°C, IC = 1,5 mA
Eingangskapazität
input capacitance
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
Kollektor-Emitter Reststrom
collector-emitter cut off current
VGE = 0V, Tvj = 25°C, VCE = 1200 V
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
VCE = 0V, VGE =20V, Tvj =25°C
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 125°C, RG =
Lσ =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 125°C, RG =
Lσ =
tP 10µs, VGE 15V, RG =
Tvj125°C,
VCC =
600 V
27 Ohm
27 Ohm
600 V
27 Ohm
27 Ohm
600 V
27 Ohm
27 Ohm
600 V
27 Ohm
27 Ohm
600 V
27 Ohm
45 nH
600 V
27 Ohm
45 nH
27 Ohm
720 V
min. typ. max.
VF - 1,2 - V
V(TO)
-
- 0,8 V
rT - - 10,5 m
IR - 2 - mA
RAA'+CC'
-
5
- m
VCE sat
min.
-
-
typ.
1,8
2,15
max.
2,3
-
V
V
VGE(TO) 5,0 5,8 6,5
V
Cies - 2,5 - nF
ICES
-
-
5 mA
IGES
-
- 400 nA
td,on - 85 - ns
- 90 - ns
tr - 30 - ns
- 45 - ns
td,off - 420 - ns
- 520 -
ns
tf - 65 - ns
- 90 - ns
Eon - 5,8 - mWs
Eoff - 4,9 - mWs
ISC - 160 - A
2(11)
DB-PIM-IGBT3_2Serie.xls


Features Technische Information / Technical Infor mation IGBT-Module IGBT-Modules FP40R1 2KE3 Elektrische Eigenschaften / Elect rical properties Höchstzulässige Wert e / Maximum rated values Diode Gleichri chter/ Diode Rectifier Periodische Rüc kw. Spitzensperrspannung repetitive pea k reverse voltage Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output Durchlaßstrom Gre nzeffektivwert proChip Forward current RMS maximum per Chip Stoßstrom Grenzwe rt surge forward current Grenzlastinteg ral I t - value 2 Tvj = 25°C TC = 80 C TC = 80°C tP = 10 ms, T vj = tP = 1 0 ms, T vj = 25°C 25°C VRRM IRMSmax IFRMSM IFSM I2 t 1600 60 V A A A A A2 s A2s tP = 10 ms, T vj = 150°C tP = 1 0 ms, T vj = 150°C Transistor Wechsel richter/ Transistor Inverter Kollektor- Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC- collector current Periodischer Kollekto r Spitzenstrom repetitive peak collecto r current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitz.
Keywords FP40R12KE3, datasheet, pdf, Eupec, IGBT, POWER, MODULE, P40R12KE3, 40R12KE3, 0R12KE3, FP40R12KE, FP40R12K, FP40R12, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)