JAN2N2920 Data Sheet PDF | New England Semiconductor





(Datasheet) JAN2N2920 data sheet PDF

Part Number JAN2N2920
Description (JAN2N2919 / JAN2N2920) Transistor
Manufacture New England Semiconductor
Total Page 18 Pages
PDF Download Download JAN2N2920 Datasheet PDF

Features: INCH-POUND The documentation and process conversion measures necessary to compl y with this document shall be completed by 3 October 2005. MIL-PRF-19500/355K 3 July 2005 SUPERSEDING MIL-PRF-19500/3 55J 8 July 2004 PERFORMANCE SPECIFICAT ION SHEET SEMICONDUCTOR DEVICE, UNITIZE D DUAL TRANSISTOR, NPN, SILICON, TYPES 2N2919, 2N2920, 2N2919L, 2N2920L, 2N291 9U, AND 2N2920U, JAN, JANTX, JANTXV, JA NS, JANHC, AND JANKC This specificatio n is approved for use by all Department s and Agencies of the Department of Def ense. The requirements for acquiring th e product described herein shall consis t of this specification sheet and MIL-P RF-19500. 1. SCOPE 1.1 Scope. This spec ification covers the performance requir ements for two electrically isolated, m atched NPN silicon transistors as one d ual unit. Four levels of product assura nce are provided for each device type a s specified in MIL-PRF-19500. Two level s of product assurance are provided for die. 1.2 Physical dimensions. See figure 1 (similar to TO-78),.

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JAN2N2920 datasheet
The documentation and process conversion
measures necessary to comply with this document
shall be completed by 3 October 2005.
INCH-POUND
MIL-PRF-19500/355K
3 July 2005
SUPERSEDING
MIL-PRF-19500/355J
8 July 2004
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON,
TYPES 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, AND 2N2920U,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN
silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified
in MIL-PRF-19500. Two levels of product assurance are provided for die.
1.2 Physical dimensions. See figure 1 (similar to TO-78), figure 2 (surface mount), figure 3 (JANHCA and
JANKCA die), figure 4 (JANHCB and JANKCB die).
* 1.3 Maximum ratings, unless otherwise specified, TC =+25°C.
PT (1)
TA = +25°C
PT (2)
TC = +25°C
IC
VCBO
VCEO
VEBO
One Both One Both
section sections section sections
TJ and TSTG
mW mW
mW
W mA V dc V dc V dc
°C
dc
300 600 750 1.25
70 60 6 -65 to +200
30
(1) For TA > +25°C, derate linearly 1.71 mW/°C, one section; 3.43 mW/°C, both sections.
(2) For TC > +25°C, derate linearly 4.286 mW/°C, one section; 7.14 mW/°C, both sections.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at http://assist.daps.dla.mil .
AMSC N/A
FSC 5961
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