Power Transistor. HD1530JL Datasheet

HD1530JL Transistor. Datasheet pdf. Equivalent

HD1530JL Datasheet
Recommendation HD1530JL Datasheet
Part HD1530JL
Description High Voltage NPN Power Transistor
Feature HD1530JL; HD1530JL High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display Feat.
Manufacture ST Microelectronics
Datasheet
Download HD1530JL Datasheet




ST Microelectronics HD1530JL
HD1530JL
High Voltage NPN Power Transistor
for High Definition and New Super-Slim CRT Display
Features
Figure 1. Package
PRELIMINARY DATA
STATE-OF-THE-ART TECHNOLOGY:
DIFFUSED COLLECTOR “ENHANCED
GENERATION“ EHVS1
WIDER RANGE OF OPTIMUM DRIVE
CONDITIONS
t(s) LESS SENSITIVE TO OPERATING
TEMPERATURE VARIATION
duc Applications
ro HORIZONTAL DEFLECTION OUTPUT FOR
P DIGITAL TV, HDTV, AND HIGH -END
te MONITORS
le Description
so The device uses a Diffused Collector in Planar
b technology which adopts ”Enhanced High Voltage
O Structure” (EHVS1) that was developed to fit
- High-Definition CRT displays.
t(s) The new HD product series features improved
c silicon efficiency, bringing updated performance to
u Horizontal Deflection output stages.
1
TO-264
3
2
Figure 2. Internal Schematic Diagram
Obsolete Prod Table 1. Order Codes
Part Number
Marking
Package
Packing
HD1530JL
HD1530JL
TO-264
TUBE
July 2005
rev.1
1/5
www.st.com
5



ST Microelectronics HD1530JL
HD1530JL
Table 2. Absolute Maximum Rating
Symbol
Parameter
Value
Unit
VCES Collector-Emitter Voltage (VBE = 0)
1500
V
VCEO Collector-Emitter Voltage (IB = 0)
700
V
VEBO Emitte-Base Voltage (IC = 0)
10
V
IC
Collector Current
26
A
ICM Collector Peak Current (tP < 5ms)
40
A
IB
Base Current
10
A
IBM Base Peak Current (tP < 5ms)
20
A
PTOT Total dissipation at Tc = 25°C
200
W
TSTG
) TJ
Storage Temperature
Max. Operating Junction Temperature
-65 to 150
°C
150
°C
ct(s Table 3.
u Symbol
rod RthJC
Thermal Data
Parameter
Thermal Resistance Junction-Case____________________Max
Value
0.625
Unit
°C/W
te P Table 4. Electrical Characteristics (TCASE = 25°C; unless otherwise specified)
le Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
o ICES Collector Cut-off Current
VCE = 1500V
bs (VBE = 0)
VCE = 1500V____TC = 125°C
O IEBO Emitter Cut-off Current
VEB = 5V
- (IC = 0)
) VCEO(SUS) Collector-Emitter
IC = 10mA
700
t(s Note: 1 Susting Voltage (IB = 0)
c VEBO Emitter-Base Voltage (IC = 0)
IE = 10mA
10
u VCE(sat) Collector-Emitter Saturation Voltage IC = 13A _____ IB = 3.25A
0.2 mA
2
mA
10
μA
V
V
2.5
V
rod Note: 1
VBE(sat) Base-Emitter Saturation Voltage
IC = 13A _____ IB = 3.25A
1
1.5
V
P Note: 1
te hFE DC Current Gain
soleINDUCTIVE LOAD
Ob ts
Storage Time
IC = 1A _____ VCE = 5V
28
IC = 13A ____ VCE = 5V
5
8
IC = 12A ____ _ fh = 32KHz
IB(on) = 1.5A ___ IB(off) = -6.1A
3.3
μs
tf
Fall Time
240
ns
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 12A _____ fh = 48KHz
IB(on) = 2A ____ IB(off) = -6.7A
2.8
μs
200
ns
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 6.5A _____ fh = 100KHz
IB(on) = 0.9A ___ IB(off) = -4.6A
1.5
μs
110
ns
Note: 1 Pulsed duration = 300 μs, duty cycle 1.5%.
2/5



ST Microelectronics HD1530JL
HD1530JL
Table 5. TO-264 Mechanical Data
Figure 3. TO-264
Obsolete
DPrawriong duct(s)
-
Obsolete
Product(s)
3/5







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