VOLTAGE DIODE. STTA2512P Datasheet

STTA2512P DIODE. Datasheet pdf. Equivalent


Part STTA2512P
Description (STTAxxxx) TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
Feature ( DataSheet : www.DataSheet4U.com ) ® STTA2512P STTA5012TV1/2 TURBOSWITCH ™ ULTRA-FAST HIGH VOLTA.
Manufacture ST Microelectronics
Datasheet
Download STTA2512P Datasheet


( DataSheet : www.DataSheet4U.com ) ® STTA2512P STTA5012TV STTA2512P Datasheet
Recommendation Recommendation Datasheet STTA2512P Datasheet




STTA2512P
( DataSheet : www.DataSheet4U.com )
STTA2512P
® STTA5012TV1/2
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
trr (typ)
VF (max)
25A
1200V
60ns
1.9V
K2 A2
K1 A1
STTA5012TV1
A2 K1
K2 A1
STTA5012TV2
FEATURES AND BENEFITS
ULTRA-FAST, SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY AND/OR HIGH PULSED
CURRENT OPERATION.
HIGH REVERSE VOLTAGE CAPABILITY.
LOW INDUCTANCE PACKAGE < 5 nH.
INSULATED PACKAGE : ISOTOPTM
Electrical insulation : 2500VRMS
Capacitance : < 45pF.
ISOTOPTM
K
A
K
SOD93
STTA2512P
DESCRIPTION
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operations which require extremely
fast, soft and noise-free power diodes. Due to their
optimized switching performances they also highly
decrease power losses in any associated
switching IGBT or MOSFET in all freewheel mode
operations.
They are particularly suitable in Motor Control
circuitries, or in the primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for secondary of SMPS as high voltage
rectifier diodes.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
IF(RMS)
IFRM
IFSM
Tstg
Tj
Parameter
Value
Repetitive peak reverse voltage
1200
RMS forward current
50
Repetitive peak forward current
tp = 5 µs F = 5kHz square
300
Surge non repetitive forward current tp = 10ms sinusoidal
210
Storage temperature range
- 65 to + 150
Maximum operating junction temperature
150
Unit
V
A
A
A
°C
°C
ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics.
November 1999 - Ed: 4B
1/9
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STTA2512P
STTA2512P / STTA5012TV1/2
THERMAL AND POWER DATA (per diode)
Symbol
Rth(j-c)
Rth(c)
P1
Pmax
Parameter
Junction to case thermal
resistance
Coupling thermal resistance
Conduction power dissipation
IF(AV) = 25A δ =0.5
Total power dissipation
Pmax = P1 + P3 (P3 = 10% P1)
ISOTOP
ISOTOP
SOD93
ISOTOP
ISOTOP
SOD93
ISOTOP
SOD93
Conditions
Per diode
Total
Coupling
Tc= 70°C
Tc= 82°C
Tc= 62°C
Tc= 75°C
Value
1.4
0.75
1.2
0.1
57
62.5
Unit
°C/W
°C/W
W
W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
VF * Forward voltage drop
IR ** Reverse leakage current
Vto
Rd
Test pulses :
Threshold voltage
Dynamic resistance
* tp = 380 µs, δ < 2%
** tp = 5 ms , δ < 2%
Test conditions
IF =25A
Tj = 25°C
Tj = 125°C
VR =0.8 x
VRRM
Tj = 25°C
Tj = 125°C
Ip < 3.IF(AV) Tj = 125°C
Min Typ Max Unit
2.1
1.3 1.9
V
V
150 µA
2.0 8 mA
1.52 V
15 m
To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + Rd x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS (per diode)
TURN-OFF SWITCHING
Symbol
Parameter
trr Reverse recovery
time
IRM Maximum reverse
recovery current
S factor Softness factor
Test conditions
Min Typ Max Unit
Tj = 25°C
IF = 0.5 A IR = 1A Irr = 0.25A
IF = 1 A dIF/dt =-50A/µs VR =30V
ns
60
110
Tj = 125°C VR = 600V IF =25A
dIF/dt = -200 A/µs
dIF/dt = -500 A/µs
35
45
A
Tj = 125°C VR = 600V IF =25A
/
dIF/dt = -500 A/µs
1.2
TURN-ON SWITCHING
Symbol
Parameter
tfr Forward recovery time
VFp Peak forward voltage
Test conditions
Min Typ Max Unit
Tj = 25°C
IF =25 A, dIF/dt = 200 A/µs
measured at 1.1 × VFmax
ns
900
Tj = 25°C
IF =25A, dIF/dt = 200 A/µs
IF =40A, dIF/dt = 500 A/µs
30
35
V
2/9







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