NAND Flash. HY27UF084G2M Datasheet

HY27UF084G2M Flash. Datasheet pdf. Equivalent


Part HY27UF084G2M
Description 4Gbit (512K x 8-Bit) NAND Flash
Feature ( DataSheet : www.DataSheet4U.com ) Preliminary HY27UF084G2M Series 4Gbit (512Mx8bit) NAND Flash 4.
Manufacture Hynix Semiconductor
Datasheet
Download HY27UF084G2M Datasheet


( DataSheet : www.DataSheet4U.com ) Preliminary HY27UF084G2 HY27UF084G2M Datasheet
Recommendation Recommendation Datasheet HY27UF084G2M Datasheet




HY27UF084G2M
( DataSheet : www.DataSheet4U.com )
Preliminary
HY27UF084G2M Series
4Gbit (512Mx8bit) NAND Flash
4Gb NAND FLASH
HY27UF084G2M
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 0.3/ Nov. 2005
1
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HY27UF084G2M
Document Title
4Gbit (512Mx8bit) NAND Flash Memory
Preliminary
HY27UF084G2M Series
4Gbit (512Mx8bit) NAND Flash
Revision History
Revision
No.
History
0.0 Initial Draft.
1) Add ULGA Package.
- Figures & texts are added.
2) Add Read ID Table
3) Correct the test Conditions (DC Characteristics table)
Test Conditions (ILI, ILO)
Before VIN=VOUT=0 to 3.6V
After VIN=VOUT=0 to Vcc (max)
3) Change AC Conditions table
4) Add tWW parameter ( tWW = 100ns, min)
0.1 - Texts & Figures are added.
- tWW is added in AC timing characteristics table.
4) Edit System Interface Using CE don’t care.
5) Add Marking Information.
6) Correct Address Cycle Map.
7) Correct PKG dimension (TSOP PKG)
CP
Before 0.050
After
0.100
8) Delete the 1.8V device’s features.
Draft Date Remark
Dec. 2004
Initial
Aug. 08. 2005 Preliminary
Rev. 0.3 / Nov. 2005
2







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