Power MOSFET. NTF3055-160 Datasheet

NTF3055-160 MOSFET. Datasheet pdf. Equivalent

Part NTF3055-160
Description Power MOSFET
Feature ( DataSheet : www.DataSheet4U.com ) NTF3055-160 Preferred Device Power MOSFET 2.0 Amps, 60 Volts N.
Manufacture ON Semiconductor
Datasheet
Download NTF3055-160 Datasheet

( DataSheet : www.DataSheet4U.com ) NTF3055-160 Preferred D NTF3055-160 Datasheet
Recommendation Recommendation Datasheet NTF3055-160 Datasheet




NTF3055-160
( DataSheet : www.DataSheet4U.com )
NTF3055-160
Preferred Device
Power MOSFET
2.0 Amps, 60 Volts
N–Channel SOT–223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–to–Source Voltage
VDSS 60
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR 60
Gate–to–Source Voltage
– Continuous
– Non–repetitive (tp 10 ms)
VGS
± 20
± 30
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tp 10 µs)
ID 2.0
ID 1.2
IDM 6.0
Total Power Dissipation @ TA = 25°C (Note 1.) PD
2.1
Total Power Dissipation @ TA = 25°C (Note 2.)
1.3
Derate above 25°C
0.014
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W
W/°C
Operating and Storage Temperature Range
TJ, Tstg –55 to °C
175
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL(pk) = 6.0 Apk, L = 10 mH, VDS = 60 Vdc)
EAS
65 mJ
Thermal Resistance
– Junction to Ambient (Note 1.)
– Junction to Ambient (Note 2.)
RθJA
RθJA
°C/W
72.3
114
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL 260 °C
1. When surface mounted to an FR4 board using 1pad size,
(Cu. Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2–2.4 oz. (Cu. Area 0.272 in2).
http://onsemi.com
2.0 AMPERES
60 VOLTS
RDS(on) = 160 mW
N–Channel
D
G
S
MARKING
DIAGRAM
1
2
3
4 SOT–223
CASE 318E
STYLE 3
5160
LWW
5160
L
WW
= Device Code
= Location Code
= Work Week
PIN ASSIGNMENT
4 Drain
123
Gate Drain Source
ORDERING INFORMATION
Device
Package Shipping
NTF3055–160T1
NTF3055–160T3
SOT–223 1000 Tape & Reel
SOT–223 4000 Tape & Reel
NTF3055–160T3LF SOT–223 4000 Tape & Reel
www.DataSheet4U.com
www.D©aStaemSihcoenedtu4ctUor.cCoommponents Industries, LLC, 2001
July, 2001 – Rev. 0
1
Publication Order Number:
NTF3055–160/D



NTF3055-160
NTF3055–160
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 3.)
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
72
72
Vdc
– mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3.)
Gate Threshold Voltage (Note 3.)
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
IDSS
µAdc
– – 1.0
– – 10
IGSS
± 100
nAdc
VGS(th)
Vdc
2.0 3.1 4.0
– 6.6 – mV/°C
Static Drain–to–Source On–Resistance (Note 3.)
(VGS = 10 Vdc, ID = 1.0 Adc)
Static Drain–to–Source On–Resistance (Note 3.)
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 10 Vdc, ID = 1.0 Adc, TJ = 150°C)
Forward Transconductance (Note 3.)
(VDS = 8.0 Vdc, ID = 1.5 Adc)
RDS(on)
VDS(on)
gfs
m
– 142 160
Vdc
– 0.142 0.384
0.270
– 1.8 – Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 V,
f = 1.0 MHz)
Ciss
Coss
Crss
200 280
pF
– 68 100
– 26 40
SWITCHING CHARACTERISTICS (Note 4.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 9.1 ) (Note 3.)
Gate Charge
(VDS = 48 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc) (Note 3.)
td(on)
tr
td(off)
tf
QT
Q1
Q2
– 9.2 20 ns
– 9.2 20
– 16 40
– 9.2 20
– 6.9 14 nC
– 1.4 –
– 3.0 –
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc,
TJ = 150°C) (Note 3.)
Reverse Recovery Time
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (Note 3.)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
4. Switching characteristics are independent of operating junction temperatures.
VSD
trr
ta
tb
QRR
Vdc
– 0.86 1.0
– 0.70 –
– 28.9 –
ns
– 19.1 –
– 9.8 –
– 0.030 –
µC
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