Power Amplifier. MRFIC1859 Datasheet

MRFIC1859 Amplifier. Datasheet pdf. Equivalent

Part MRFIC1859
Description Dual Band / GSM 3.6V Integrated Power Amplifier
Feature Order this document by MRFIC1859/D Dual-Band/GSM 3.6 V Integrated Power Amplifier The MRFIC1859 is .
Manufacture Motorola
Datasheet
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MRFIC1859
Order this document by MRFIC1859/D
Dual-Band/GSM 3.6 V
Integrated Power Amplifier
MRFIC1859
The MRFIC1859 is a dual–band, single supply RF Power Amplifier for
GSM900/DCS1800 hand held radios. The on–chip spur free voltage
generator reduces the number of external components by eliminating the
need for a negative voltage supply. The device output power can be
controlled open loop without the use of directional coupler and detection
diode. The MRFIC1859 is General Packet Radio Service (GPRS)
compatible. The device is packaged in a TQFP–32EP with exposed
backside pad allowing excellent electrical and thermal performance through
a solderable contact.
Single Positive Supply Solution
Input/Output External Matching
High Power and Efficiency
Typical 3.6 V Characteristics:
Pout = 36.2 dBm, PAE = 53% for GSM
Pout = 34 dBm, PAE = 43% for DCS
Crosstalk Harmonic Leakage of –27 dBm Typical (GSM)
DUAL–BAND
GSM 3.6 V IPA
SEMICONDUCTOR
TECHNICAL DATA
32 1
(Scale 2:1)
PLASTIC PACKAGE
CASE 873E
(TQFP–32EP)
ORDERING INFORMATION
Device
Operating
Temperature Range Package
MRFIC1859R2 TC = –35 to 100°C TQFP–32EP
Simplified Block Diagram
D1G D2B B2B
B1G
D2G
B23G
InG OutG
Negative and Positive
Voltage Generator
VSS
VP
VSC
InD OutD
B1D
D1D D1B
B23D
G2D
D2D
This device contains 21 active transistors.
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
© Motorola, Inc. 2000
Rev 4
1



MRFIC1859
MRFIC1859
PIN CONNECTIONS
VSS D2B B2B OutD OutD Out D OutD OutD
32 31 30 29 28 27 26 25
B23G 1
VP 2
Gnd 3
OutG 4
OutG 5
OutG 6
OutG 7
OutG 8
24 B23D
23 D2D
22 D2D
21 VSC
20 G2D
19 D1G
18 B1G
17 InG
9 10 11 12 13 14 15 16
M2G D2G D2G D2G D1D D1B B1D InD
Exposed Pad
(Gnd–on bottom)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage
RF Input Power
VD1B,D2B
VD1G,D2G,
D3G,D1D,
D2D,D3D
6.0
V
InG, InD
12 dBm
RF Output Power
GSM Section
DCS Section
OutG
OutD
dBm
38
36
Operating Case Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case
TC
Tstg
RθJC
–35 to 100
–55 to 150
15
°C
°C
°C/W
NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the limits in the Recommended Operating
Contitions or Electrical Characteristics tables.
2. Meets Human Body Model (HBM) 100 V and Machine Model (MM) 60 V. Additional ESD
data available upon request.
RECOMMENDED OPERATING CONDITIONS
Characteristic
Supply
Input Power GSM
Input Power DCS
Symbol Min Typ Max
VD1B,D2B
2.8
5.5
VD1G,D2G,
D3G,D1D,
D2D,D3D
InG 3.0 – 10
InD 5.0 – 12
Unit
V
dBm
dBm
2 MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA





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