Effect Transistors. MRF1535FT1 Datasheet

MRF1535FT1 Transistors. Datasheet pdf. Equivalent

Part MRF1535FT1
Description RF Power Field Effect Transistors
Feature ( DataSheet : www.DataSheet4U.com ) Freescale Semiconductor Technical Data MRF1535T1 Rev. 7, 3/200.
Manufacture Motorola
Datasheet
Download MRF1535FT1 Datasheet

( DataSheet : www.DataSheet4U.com ) Freescale Semiconductor MRF1535FT1 Datasheet
( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR MRF1535FT1 Datasheet
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MRF1535FT1
( DataSheet : www.DataSheet4U.com )
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
NChannel EnhancementMode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of these devices
make them ideal for largesignal, common source amplifier applications in
12.5 volt mobile FM equipment.
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 35 Watts
Power Gain — 10.0 dB
Efficiency — 50%
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent LargeSignal Impedance Parameters
BroadbandFull Power Across the Band: 135175 MHz
400470 MHz
450520 MHz
Broadband UHF/VHF Demonstration Amplifier Information Available
Upon Request
N Suffix Indicates LeadFree Terminations
200_C Capable Plastic Package
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF1535T1
Rev. 7, 3/2005
MRF1535NT1
MRF1535FNT1
MRF1535T1
MRF1535FT1
520 MHz, 35 W, 12.5 V
LATERAL NCHANNEL
BROADBAND
RF POWER MOSFETs
CASE 126409, STYLE 1
TO272
PLASTIC
MRF1535T1(NT1)
Table 1. Maximum Ratings
CASE 1264A02, STYLE 1
TO272 STRAIGHT LEAD
PLASTIC
MRF1535FT1(FNT1)
Rating
Symbol
Value
Unit
DrainSource Voltage
GateSource Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
VDSS
VGS
ID
PD
0.5, +40
± 20
6
135
0.50
Vdc
Vdc
Adc
W
W/°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg
65 to +150
°C
TJ 200 °C
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
RθJC
0.90 °C/W
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22A113, IPC/JEDEC JSTD020
1 260 °C
1.
Calculated based on the formula PD =
TJ TC
RθJC
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
www.DataSheet4U.com
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MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
1



MRF1535FT1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Off Characteristics
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
GateSource Leakage Current
(VGS = 10 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 400 µA)
DrainSource OnVoltage
(VGS = 5 Vdc, ID = 0.6 A)
DrainSource OnVoltage
(VGS = 10 Vdc, ID = 2.0 Adc)
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
RF Characteristics (In Freescale Test Fixture)
CommonSource Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 35 Watts, IDQ = 500 mA)
f = 520 MHz
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 35 Watts, IDQ = 500 mA)
f = 520 MHz
Load Mismatch
(VDD = 15.6 Vdc, f = 520 MHz, 2 dB Input Overdrive, VSWR 20:1 at
All Phase Angles)
Symbol
Min Typ Max
Unit
V(BR)DSS
IDSS
IGSS
60 — —
——
1
— — 0.3
Vdc
µAdc
µAdc
VGS(th)
RDS(on)
VDS(on)
1 — 2.6
— — 0.7
——
1
Vdc
Vdc
Ciss
Coss
Crss
— — 250
— — 150
— — 20
pF
pF
pF
Gps dB
10 — —
η%
50 — —
Ψ No Degradation in Output Power
Before and After Test
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
2
RF Device Data
Freescale Semiconductor





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