Effect Transistor. MRF1518T1 Datasheet

MRF1518T1 Transistor. Datasheet pdf. Equivalent


Part MRF1518T1
Description RF Power Field Effect Transistor
Feature ( DataSheet : www.DataSheet4U.com ) Freescale Semiconductor Technical Data MRF1518 Rev. 6, 3/2005 .
Manufacture Motorola
Datasheet
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( DataSheet : www.DataSheet4U.com ) Freescale Semiconductor MRF1518T1 Datasheet
( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR MRF1518T1 Datasheet
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MRF1518T1
( DataSheet : www.DataSheet4U.com )
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of this device
make it ideal for large- signal, common source amplifier applications in 12.5 volt
mobile FM equipment.
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 8 Watts
Power Gain — 11 dB
Efficiency — 55%
D
Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal
Impedance Parameters
RF Power Plastic Surface Mount Package
Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
G
N Suffix Indicates Lead - Free Terminations
Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 Inch Reel.
S
MRF1518
Rev. 6, 3/2005
MRF1518NT1
MRF1518T1
520 MHz, 8 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1.
Calculated based on the formula PD =
TJ TC
RθJC
Rating
1
Symbol
VDSS
VGS
ID
PD
Tstg
TJ
Value
- 0.5, +40
± 20
4
62.5
0.50
- 65 to +150
150
Symbol
RθJC
Value
2
Package Peak Temperature
260
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Unit
°C/W
Unit
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
www.DRaFtaDSheeveict4eUD.caotma
Freescale Semiconductor
www.DataSheet4U.com
MRF1518NT1 MRF1518T1
1



MRF1518T1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Current
(VDS = 40 Vdc, VGS = 0 Vdc)
IDSS — —
1 µAdc
Gate- Source Leakage Current
(VGS = 10 Vdc, VDS = 0 Vdc)
IGSS — —
1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 100 µA)
VGS(th)
1.0
1.6
2.1
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
Dynamic Characteristics
Input Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
VDS(on)
0.4
Vdc
Ciss — 66 — pF
Coss — 33 — pF
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Crss — 4.5 — pF
Functional Tests (In Freescale Test Fixture)
Common- Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
Gps 10 11 — dB
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
η 50 55 — %
MRF1518NT1 MRF1518T1
2
RF Device Data
Freescale Semiconductor





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