POWER TRANSISTOR. MRF15090 Datasheet

MRF15090 TRANSISTOR. Datasheet pdf. Equivalent

Part MRF15090
Description RF POWER TRANSISTOR
Feature ( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by .
Manufacture Motorola
Datasheet
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( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR MRF15090 Datasheet
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MRF15090
( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF15090/D
The RF Line
NPN Silicon
RF Power Transistor
Designed for 26 volts microwave large–signal, common emitter, class A and
class AB linear amplifier applications in industrial and commercial FM/AM
equipment operating in the range 1400–1600 MHz.
Specified 26 Volts, 1490 MHz, Class AB Characteristics
Output Power — 90 Watts (PEP)
Gain — 7.5 dB Min @ 90 Watts (PEP)
Collector Efficiency — 30% Min @ 90 Watts (PEP)
Intermodulation Distortion — –28 dBc Max @ 90 Watts (PEP)
Third Order Intercept Point — 56.5 dBm Typ @ 1490 MHz, VCE = 24 Vdc,
IC = 5 Adc
Characterized with Series Equivalent Large–Signal Parameters from
1400–1600 MHz
Characterized with Small–Signal S–Parameters from 1000–2000 MHz
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at All Phase Angles with 3:1 Load
VSWR @ 28 Vdc, and Rated Output Power
Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Collector–Emitter Voltage
Rating
Collector–Emitter Voltage
Emitter–Base Voltage
Collector–Current — Continuous @ TJ(max) = 150°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, RBE = 100 )
V(BR)CEO
V(BR)CES
V(BR)CER
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
Symbol
RθJC
Min
25
60
30
REV 7
www.DaMMtoaOtSoTrhoeOlae,RtI4nOUc.L.1cA9o9mR8 F DEVICE DATA
MRF15090
90 W, 1.5 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 375A–01, STYLE 1
Value
25
60
4
15
250
1.43
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Max Unit
0.70 °C/W
Typ Max Unit
28 — Vdc
65 — Vdc
— — Vdc
(continued)
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MRF15090
1



MRF15090
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS — continued
Emitter–Base Breakdown Voltage
(IE = 5 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0)
ON CHARACTERISTICS
DC Current Gain
(ICE = 1 Adc, VCE = 5 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1 MHz) –
For Information Only. This Part Is Collector Matched.
V(BR)EBO
4
4.8 — Vdc
ICES — — 10 mAdc
hFE 20 40 80 —
Cob — 52 — pF
FUNCTIONAL TESTS (Figure 12)
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
Collector Efficiency
(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
Input Return Loss
(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
Load Mismatch
(VCC = 28 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz, Load VSWR = 3:1, All Phase
Angles at Frequency of Test)
Gpe
η
IMD
IRL
ψ
7.5 8.3 — dB
30 36 — %
— – 32 – 28 dBc
12 15 — dB
No Degradation in Output Power
MRF15090
2
MOTOROLA RF DEVICE DATA





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