POWER MOSFET. MRF151G Datasheet

MRF151G MOSFET. Datasheet pdf. Equivalent

Part MRF151G
Description N-CHANNEL BROADBAND RF POWER MOSFET
Feature ( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by .
Manufacture Motorola
Datasheet
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( DataSheet : www.DataSheet4U.com ) SEMICONDUCTOR TECHNICAL MRF151G Datasheet
( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR MRF151G Datasheet
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MRF151G
( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode MOSFET
Designed for broadband commercial and military applications at frequencies
to 175 MHz. The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.
Guaranteed Performance at 175 MHz, 50 V:
Output Power — 300 W
Gain — 14 dB (16 dB Typ)
Efficiency — 50%
Low Thermal Resistance — 0.35°C/W
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
S–Parameters Available for Download into Frequency Domain Simulators.
See http://motorola.com/sps/rf/designtds/
D
G
S
G (FLANGE)
D
Order this document
by MRF151G/D
MRF151G
300 W, 50 V, 175 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375–04, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VDGO
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
Value
125
125
±40
40
500
2.85
–65 to +150
200
Max
0.35
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 9
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MRF151G
1



MRF151G
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS (Each Side)
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
ON CHARACTERISTICS (Each Side)
V(BR)DSS
IDSS
IGSS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A)
Forward Transconductance (VDS = 10 V, ID = 5.0 A)
DYNAMIC CHARACTERISTICS (Each Side)
VGS(th)
VDS(on)
gfs
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Ciss
Coss
Crss
Common Source Amplifier Power Gain
(VDD = 50 V, Pout = 300 W, IDQ = 500 mA, f = 175 MHz)
Drain Efficiency
(VDD = 50 V, Pout = 300 W, f = 175 MHz, ID (Max) = 11 A)
Load Mismatch
(VDD = 50 V, Pout = 300 W, IDQ = 500 mA,
VSWR 5:1 at all Phase Angles)
Gps
η
ψ
R1
+
BIAS 0ā-ā6 V
-
C4 C5
INPUT
R2
C1
C2
C3
D.U.T.
T1
C6
Min Typ Max Unit
125 —
— Vdc
— — 5.0 mAdc
— — 1.0 µAdc
1.0 3.0 5.0 Vdc
1.0 3.0 5.0 Vdc
5.0 7.0 — mhos
— 350 —
— 220 —
— 15 —
pF
pF
pF
14 16 — dB
50 55 — %
No Degradation in Output Power
C9 C10
L2
L1
T2
+
C11 50 V
-
OUTPUT
C12
C7 C8
R1 — 100 Ohms, 1/2 W
R2 — 1.0 kOhm, 1/2 W
C1 — Arco 424
C2 — Arco 404
C3, C4, C7, C8, C9 — 1000 pF Chip
C5, C10 — 0.1 µF Chip
C6 — 330 pF Chip
C11 — 0.47 µF Ceramic Chip, Kemet 1215 or
C11 — Equivalent (100 V)
C12 — Arco 422
L1 — 10 Turns AWG #18 Enameled Wire,
L1 — Close Wound, 1/4I.D.
L2 — Ferrite Beads of Suitable Material for
L2 — 1.5āā2.0 µH Total Inductance
T1 — 9:1 RF Transformer. Can be made of 15āā18 Ohms
T1 — Semirigid Co–Ax, 62āā90 Mils O.D.
T2 — 1:4 RF Transformer. Can be made of 16āā18 Ohms
T2 — Semirigid Co–Ax, 70–90 Mils O.D.
Board Material — 0.062Fiberglass (G10),
1 oz. Copper Clad, 2 Sides, εr = 5.0
NOTE: For stability, the input transformer T1 must be loaded
NOTE: with ferrite toroids or beads to increase the common
NOTE: mode inductance. For operation below 100 MHz. The
NOTE: same is required for the output transformer.
Unless Otherwise Noted, All Chip Capacitors are ATC Type 100 or
Equivalent.
See Figure 6 for construction details of T1 and T2.
Figure 1. 175 MHz Test Circuit
MRF151G
2
MOTOROLA RF DEVICE DATA





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