STP36NE06. P36NE06 Datasheet

P36NE06 STP36NE06. Datasheet pdf. Equivalent


ST Microelectronics P36NE06
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STP36NE06
® STP36NE06FP
N - CHANNEL 60V - 0.032- 36A - TO-220/TO-220FP
STripFETPOWER MOSFET
TYPE
STP36NE06
STP36NE06FP
VDSS
60 V
60 V
RDS(on)
< 0.040
< 0.040
s TYPICAL RDS(on) = 0.032
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
ID
36 A
20 A
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
dv/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
July 1998
Value
Unit
STP36NE06 STP36NE06FP
60 V
60 V
± 20
V
36 20 A
24 14 A
144 144 A
100
0.66
35
0.27
W
W/oC
2000
V
7 V/ns
-65 to 175
oC
175 oC
(1) ISD 36 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
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P36NE06 Datasheet
Recommendation P36NE06 Datasheet
Part P36NE06
Description STP36NE06
Feature P36NE06; ( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com ® STP36NE06 STP36NE06FP N - CHANNEL 60V .
Manufacture ST Microelectronics
Datasheet
Download P36NE06 Datasheet




ST Microelectronics P36NE06
STP36NE06FP
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
TO-220FP
1.51
4.28
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 25V)
Max Value
36
180
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
oC
Tc = 125
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
60
Typ.
Max.
Unit
V
1 µA
10 µA
± 100 nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 18 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2
Typ.
3
Max.
4
Unit
V
0.032 0.04
36 A
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =18 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
7
Typ.
15
Max.
Unit
S
2115
260
65
2800
350
90
pF
pF
pF
2/9



ST Microelectronics P36NE06
STP36NE06FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 30 V
RG =4.7
VDD = 48 V
RG = 4.7
VDD = 48 V
ID = 18 A
VGS = 10 V
ID = 36 A
VGS =10 V
ID = 36 A VGS = 10 V
Min.
Typ.
28
85
250
50
13
18
Max.
40
115
70
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 48 V ID = 36 A
RG =4.7 VGS = 10 V
Min.
Typ.
12
25
40
Max.
16
35
55
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 36 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 36 A
VDD = 30 V
IRRM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
Max.
36
144
Unit
A
A
1.5
75
245
6.5
V
ns
µC
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9







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