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CONTROL APPLICATIONS. SM12JZ47 Datasheet |
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SM12GZ47, SM12JZ47, SM12GZ47A, SM12JZ47A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM12GZ47, SM12JZ47, SM12GZ47A, SM12JZ47A
AC POWER CONTROL APPLICATIONS
Repetitive Peak off−State Voltage
R.M.S On−State Current
High Commutating (dv / dt)
Isolation Voltage
: VDRM = 400V, 600V
: IT (RMS) = 12A
: VIsol = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
Repetitive Peak
Off−State Voltage and
Repetitive Peak
Reverse Voltage
SM12GZ47
SM12GZ47A
SM12JZ47
SM12JZ47A
R. M. S. On−state Current
(Full Sine Waveform TC = 72°C)
VDRM
IT (RMS)
Peak One Cylce Surge On−State
Current (Non−Repetitive)
I2t Limit Value
Critical Rate of Rise of On-State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
ITSM
I2t
di / dt
PGM
PG (AV)
VFGM
IGM
Tj
Tstg
VIsol
RATING
400
600
12
120 (50Hz)
132 (60Hz)
72
50
5
0.5
10
2
−40~125
−40~125
1500
UNIT
V
A
A
A2s
A / µs
W
W
V
A
°C
°C
V
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
13-10H1A
Weight: 1.7 g (typ.)
Note 1: di / dt test condition
VDRM = 0.5 × Rated
ITM ≤ 17A
tgw ≥ 10µs
tgr ≤ 250ns
igp = IGT × 2.0
1 2004-07-06
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SM12GZ47, SM12JZ47, SM12GZ47A, SM12JZ47A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current
I
Gate Trigger Voltage
II
III
IV
I
SM12GZ47
SM12JZ47
II
III
Gate Trigger
Current
IV
I
SM12GZ47A
SM12JZ47A
II
III
IV
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of
Rise of Off−State
Voltage
SM12GZ47
SM12JZ47
SM12GZ47A
SM12JZ47A
Critical Rate of
Rise of Off−State
Voltage at
Commutation
SM12GZ47
SM12JZ47
SM12GZ47A
SM12JZ47A
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
IDRM
VDRM = Rated
― ― 20 µA
T2 (+) , Gate (+) ― ― 1.5
VGT
VD = 12V,
RL = 20Ω
T2 (+) , Gate (−) ― ― 1.5
V
T2 (−) , Gate (−) ― ― 1.5
T2 (−) , Gate (+) ― ― ―
T2 (+) , Gate (+) ― ― 30
T2 (+) , Gate (−) ― ― 30
T2 (−) , Gate (−) ― ― 30
IGT
VD = 12V,
RL = 20Ω
T2 (−) , Gate (+) ― ― ―
mA
T2 (+) , Gate (+) ― ― 20
T2 (+) , Gate (−) ― ― 20
T2 (−) , Gate (−) ― ― 20
T2 (−) , Gate (+) ― ― ―
VTM
VGD
IH
Rth (j−c)
ITM = 17A
VD = Rated, Tc = 125°C
VD = 12V, ITM = 1A
Junction to Case, AC
― ― 1.5 V
0.2 ― ― V
― ― 50 mA
― ― 3.0 °C / W
dv / dt
VDRM = Rated, Tj = 125°C
Exponential Rise
― 300 ―
V / µs
― 200 ―
(dv / dt) c
VDRM = 400V, Tj = 125°C
(di / dt) c = − 6.5A / ms
10 ― ―
V / µs
4 ――
MARKING
M12GZ47
Part No. (or abbreviation code) *1
Lot No.
Part No.
(or abbreviation code)
Part No.
M12GZ47
SM12GZ47, SM12GZ47A
*1
M12JZ47
SM12JZ47, SM12JZ47A
Nothing
SM12GZ47, SM12JZ47
*2
A SM12GZ47A, SM12JZ47A
Characteristics
indicator*2
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2004-07-06
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SM12GZ47, SM12JZ47, SM12GZ47A, SM12JZ47A
3 2004-07-06
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