CONTROL APPLICATIONS. SM12GZ47 Datasheet

SM12GZ47 APPLICATIONS. Datasheet pdf. Equivalent


Toshiba Semiconductor SM12GZ47
SM12GZ47, SM12JZ47, SM12GZ47A, SM12JZ47A
TOSHIBA BIDIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM12GZ47, SM12JZ47, SM12GZ47A, SM12JZ47A
AC POWER CONTROL APPLICATIONS
Repetitive Peak offState Voltage
R.M.S OnState Current
High Commutating (dv / dt)
Isolation Voltage
: VDRM = 400V, 600V
: IT (RMS) = 12A
: VIsol = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
Repetitive Peak
OffState Voltage and
Repetitive Peak
Reverse Voltage
SM12GZ47
SM12GZ47A
SM12JZ47
SM12JZ47A
R. M. S. Onstate Current
(Full Sine Waveform TC = 72°C)
VDRM
IT (RMS)
Peak One Cylce Surge OnState
Current (NonRepetitive)
I2t Limit Value
Critical Rate of Rise of On-State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
ITSM
I2t
di / dt
PGM
PG (AV)
VFGM
IGM
Tj
Tstg
VIsol
RATING
400
600
12
120 (50Hz)
132 (60Hz)
72
50
5
0.5
10
2
40~125
40~125
1500
UNIT
V
A
A
A2s
A / µs
W
W
V
A
°C
°C
V
Unit: mm
JEDEC
JEITA
TOSHIBA
13-10H1A
Weight: 1.7 g (typ.)
Note 1: di / dt test condition
VDRM = 0.5 × Rated
ITM 17A
tgw 10µs
tgr 250ns
igp = IGT × 2.0
1 2004-07-06


SM12GZ47 Datasheet
Recommendation SM12GZ47 Datasheet
Part SM12GZ47
Description (SM12xxZ47x) AC POWER CONTROL APPLICATIONS
Feature SM12GZ47; SM12GZ47, SM12JZ47, SM12GZ47A, SM12JZ47A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE.
Manufacture Toshiba Semiconductor
Datasheet
Download SM12GZ47 Datasheet




Toshiba Semiconductor SM12GZ47
SM12GZ47, SM12JZ47, SM12GZ47A, SM12JZ47A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak OffState Current
I
Gate Trigger Voltage
II
III
IV
I
SM12GZ47
SM12JZ47
II
III
Gate Trigger
Current
IV
I
SM12GZ47A
SM12JZ47A
II
III
IV
Peak OnState Voltage
Gate NonTrigger Voltage
Holding Current
Thermal Resistance
Critical Rate of
Rise of OffState
Voltage
SM12GZ47
SM12JZ47
SM12GZ47A
SM12JZ47A
Critical Rate of
Rise of OffState
Voltage at
Commutation
SM12GZ47
SM12JZ47
SM12GZ47A
SM12JZ47A
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
IDRM
VDRM = Rated
― ― 20 µA
T2 (+) , Gate (+) ― ― 1.5
VGT
VD = 12V,
RL = 20
T2 (+) , Gate () ― ― 1.5
V
T2 () , Gate () ― ― 1.5
T2 () , Gate (+) ― ― ―
T2 (+) , Gate (+) ― ― 30
T2 (+) , Gate () ― ― 30
T2 () , Gate () ― ― 30
IGT
VD = 12V,
RL = 20
T2 () , Gate (+) ― ― ―
mA
T2 (+) , Gate (+) ― ― 20
T2 (+) , Gate () ― ― 20
T2 () , Gate () ― ― 20
T2 () , Gate (+) ― ― ―
VTM
VGD
IH
Rth (jc)
ITM = 17A
VD = Rated, Tc = 125°C
VD = 12V, ITM = 1A
Junction to Case, AC
― ― 1.5 V
0.2 ― ― V
― ― 50 mA
― ― 3.0 °C / W
dv / dt
VDRM = Rated, Tj = 125°C
Exponential Rise
300
V / µs
200
(dv / dt) c
VDRM = 400V, Tj = 125°C
(di / dt) c = 6.5A / ms
10 ― ―
V / µs
4 ――
MARKING
M12GZ47
Part No. (or abbreviation code) *1
Lot No.
Part No.
(or abbreviation code)
Part No.
M12GZ47
SM12GZ47, SM12GZ47A
*1
M12JZ47
SM12JZ47, SM12JZ47A
Nothing
SM12GZ47, SM12JZ47
*2
A SM12GZ47A, SM12JZ47A
Characteristics
indicator*2
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2004-07-06



Toshiba Semiconductor SM12GZ47
SM12GZ47, SM12JZ47, SM12GZ47A, SM12JZ47A
3 2004-07-06





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