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Flash Memory. F29C51002B Datasheet

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Flash Memory. F29C51002B Datasheet






F29C51002B Memory. Datasheet pdf. Equivalent




F29C51002B Memory. Datasheet pdf. Equivalent





Part

F29C51002B

Description

2M-Bit CMOS Flash Memory



Feature


( DataSheet : www.DataSheet4U.com ) Syn cMOS F29C51002T/F29C51002B 2 MEGABIT ( 262,144 x 8 BIT) 5 VOLT CMOS FLASH MEMO RY Description TheF29C51002T/F29C51002B is a high speed 262,144 x 8 bit CMOS f lash memory. Writing or erasing the dev ice is done with a single 5 Volt power supply. The device has separate chip en able CE, write enable WE, and output en able OE controls t.
Manufacture

SyncMOS

Datasheet
Download F29C51002B Datasheet


SyncMOS F29C51002B

F29C51002B; o eliminate bus contention. The F29C5100 2T/F29C51002B offers a combination of: Boot Block with Sector Erase/Write Mode . The end of write/erase cycle is detec ted by DATA Polling of I/O7 or by the T oggle Bit I/O6. The F 29C51002T/ F 29C5 1002B features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other s.


SyncMOS F29C51002B

ectors. The device also supports full ch ip erase. Boot block architecture enabl es the device to boot from a protected sector located either at the top (F29C5 1002T) or the bottom (F29C51002B). All inputs and outputs are CMOS and TTL com patible. The F 29C51002T/ F 29C51002B i s ideal for applications that require u pdatable code and data storage. Featur es s s s s s s 256.


SyncMOS F29C51002B

Kx8-bit Organization Address Access Time : 70, 90, 120, 150 ns Single 5V ± 10% Power Supply Sector Erase Mode Operatio n 16KB Boot Block (lockable) 512 bytes per Sector, 512 Sectors – Sector-Eras e Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 35ms (Max) Minimum 10,000 Erase-Program Cycles Low power dissipat ion – Active Read Current: 20mA (Typ) – Active Program Current.

Part

F29C51002B

Description

2M-Bit CMOS Flash Memory



Feature


( DataSheet : www.DataSheet4U.com ) Syn cMOS F29C51002T/F29C51002B 2 MEGABIT ( 262,144 x 8 BIT) 5 VOLT CMOS FLASH MEMO RY Description TheF29C51002T/F29C51002B is a high speed 262,144 x 8 bit CMOS f lash memory. Writing or erasing the dev ice is done with a single 5 Volt power supply. The device has separate chip en able CE, write enable WE, and output en able OE controls t.
Manufacture

SyncMOS

Datasheet
Download F29C51002B Datasheet




 F29C51002B
( DataSheet : www.DataSheet4U.com )
SyncMOS
F29C51002T/F29C51002B
2 MEGABIT (262,144 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
Features
s 256Kx8-bit Organization
s Address Access Time: 70, 90, 120, 150 ns
s Single 5V ± 10% Power Supply
s Sector Erase Mode Operation
s 16KB Boot Block (lockable)
s 512 bytes per Sector, 512 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Write Cycle Time: 35ms (Max)
s Minimum 10,000 Erase-Program Cycles
s Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 100mA (Max)
s Hardware Data Protection
s Low VCC Program Inhibit Below 3.5V
s Self-timed write/erase operations with end-of-cy-
cle detection
– DATA Polling
– Toggle Bit
s CMOS and TTL Interface
s Available in one versions
F29C51002T (Top Boot Block)
s Packages:
– 32-pin Plastic DIP
– 32-pin TSOP-I
– 32-pin PLCC
Description
TheF29C51002T/F29C51002B is a high speed
262,144 x 8 bit CMOS flash memory. Writing or
erasing the device is done with a single 5 Volt
power supply. The device has separate chip enable
CE, write enable WE, and output enable OE
controls to eliminate bus contention.
The F29C51002T/F29C51002B offers a combi-
nation of: Boot Block with Sector Erase/Write
Mode. The end of write/erase cycle is detected by
DATA Polling of I/O7 or by the Toggle Bit I/O6.
The F29C51002T/F29C51002B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. The device also
supports full chip erase.
Boot block architecture enables the device to
boot from a protected sector located either at the
top (F29C51002T) or the bottom (F29C51002B).
All inputs and outputs are CMOS and TTL
compatible.
The F29C51002T/F29C51002B is ideal for
applications that require updatable code and data
storage.
Device Usage Chart
Operating
Temperature
Range
0°C to 70 °C
–40°C to +85°C
Package Outline
PTJ
•••
•••
Access Time (ns)
70 90 120 150
••••
••••
Power
Std.
F29C51002T/F29C51002B V1.0 February 1998
www.DataSheet4U.com
1
Temperature
Mark
Blank
I




 F29C51002B
SyncMOS
F29C51002T/F29C51002B
F 29 C 51 002 T –
OPERATING VOLTAGE
51: 5V
31: 3V
DEVICE
BOOT BLOCK LOCATION
T: TOP
B: BOTTOM
SPEED
PKG. POWER TEMP.
70: 70ns
90: 90ns
12: 120ns
15: 150ns
P = PDIP
T = TSOP-I
J = PLCC
BLANK (0¡C TO 70¡C)
I (-40¡C TO +85¡C)
BLANK (STANDARD)
51002-01
Pin Configurations
N/C
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1 32
2 31
3 30
4 29
5 28
6 27
7 32-Pin PDIP 26
8 Top View 25
9 24
10 23
11 22
12 21
13 20
14 19
15 18
16 17
51002-02
VCC
WE
A17
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
4 3 2 1 32 31 30
5 29
6 28
7 27
8 26
32 Pin PLCC
9
Top View
25
10 24
11 23
12 22
13 21
14 15 16 17 18 19 20
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
51002-03
Pin Names
A0–A17
I/O0–I/O7
CE
OE
WE
VCC
GND
NC
Address Inputs
Data Input/Output
Chip Enable
Output Enable
Write Enable
5V ± 10% Power Supply
Ground
No Connect
A11
A9
A8
A13
A14
A17
WE
VCC
N/C
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-Pin TSOP I
Standard Pinout
Top View
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
51002-04
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
F29C51002T/F29C51002B V1.0 February 1998
2




 F29C51002B
SyncMOS
Functional Block Diagram
X-Decoder
F29C51002T/F29C51002B
2,097,152 Bit
Memory Cell Array
A0–A17
Address buffer & latches
Y-Decoder
CE
OE Control Logic
WE
I/O Buffer & Data Latches
I/O0–I/O7
51002-07
Capacitance (1,2)
Symbol Parameter
CIN Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
NOTE:
1. Capacitance is sampled and not 100% tested.
2. TA = 25°C, VCC = 5V ± 10%, f = 1 MHz.
Latch Up Characteristics(1)
Test Setup
VIN = 0
VOUT = 0
VIN = 0
Typ.
6
8
8
Max.
8
12
10
Parameter
Min.
Max.
Input Voltage with Respect to GND on A9, OE
Input Voltage with Respect to GND on I/O, address or control pins
VCC Current
NOTE:
1. Includes all pins except VCC. Test conditions: VCC = 5V, one pin at a time.
-1
-1
-100
+13
VCC + 1
+100
AC Test Load
Device Under
Test
CL = 100 pF
+5.0 V
IN3064
or Equivalent
2.7 k½
6.2 k½
IN3064 or Equivalent
IN3064 or Equivalent
IN3064 or Equivalent
Units
pF
pF
pF
Unit
V
V
mA
51002-08
F29C51002T/F29C51002B V1.0 February 1998
3






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