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POWER TRANSISTOR. 2SA1647 Datasheet

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POWER TRANSISTOR. 2SA1647 Datasheet
















2SA1647 TRANSISTOR. Datasheet pdf. Equivalent













Part

2SA1647

Description

SILICON POWER TRANSISTOR



Feature


( DataSheet : www.DataSheet4U.com ) '$7$ 6+((7 6,/,&21 32:(5 75$16,6725 6$  6$= 313 6,/,&21 (3,7$;,$/ 75$16 ,6725 )25 +,*+63((' 6:,7&+,1* The 2SA 1647 is a mold power transistor develop ed for highspeed switching and features a very low collector-to-emitter satura tion voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor .
Manufacture

NEC

Datasheet
Download 2SA1647 Datasheet


NEC 2SA1647

2SA1647; drivers, solenoid drivers, and other low -voltage power supply devices, as well as for high-current switching. FEATURE S • Available for high-current contro l in small dimension • Z type is a le ad processed product and is deal for mo unting a hybrid IC. • Low collector s aturation voltage: VCE(sat) = −0.3 V MAX. (@IC = −3 A) • Fast switching speed: tf = 0.4 µs MAX. (@IC =.


NEC 2SA1647

−3 A) • High DC current gain and ex cellent linearity ABSOLUTE MAXIMUM RAT INGS (TA = 25°C) Parameter Symbol R atings Collector to base voltage VCBO −150 Collector to emitter voltage VCEO −100 Base to emitter voltage VEBO −7.0 Collector current (DC) IC(DC) −5.0 Collector current (puls e) IC(pulse)* −10 Base current (DC ) IB(DC) −2.5 Total power diss.


NEC 2SA1647

ipation PT (Tc = 25 °C) 18 Total pow er dissipation PT (TA = 25 °C) 1.0**, 2.0*** Junction temperature Tj 150 Storage temperature Tstg −55 to +150 *: PW ≤ 10 ms, duty cycle ≤ 50% * *: Printing board mounted ***: 7.5 mm × 0.7 mm ceramic board mounted Unit V V V A A A W W °C °C PACKAGE DRAWING (UNIT: mm) (OHFWURGH &RQQHFWLRQ  %DV H  &ROOHFWRU  (PLWWHU Th.





Part

2SA1647

Description

SILICON POWER TRANSISTOR



Feature


( DataSheet : www.DataSheet4U.com ) '$7$ 6+((7 6,/,&21 32:(5 75$16,6725 6$  6$= 313 6,/,&21 (3,7$;,$/ 75$16 ,6725 )25 +,*+63((' 6:,7&+,1* The 2SA 1647 is a mold power transistor develop ed for highspeed switching and features a very low collector-to-emitter satura tion voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor .
Manufacture

NEC

Datasheet
Download 2SA1647 Datasheet




 2SA1647
( DataSheet : www.DataSheet4U.com )
'$7$ 6+((7
6,/,&21 32:(5 75$16,6725
6$ 6$=
313 6,/,&21 (3,7$;,$/ 75$16,6725
)25 +,*+63((' 6:,7&+,1*
The 2SA1647 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
• Available for high-current control in small dimension
• Z type is a lead processed product and is deal for mounting a
hybrid IC.
• Low collector saturation voltage:
VCE(sat) = 0.3 V MAX. (@IC = 3 A)
• Fast switching speed:
tf = 0.4 µs MAX. (@IC = 3 A)
• High DC current gain and excellent linearity
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
Collector to base voltage
VCBO
150
Collector to emitter voltage
VCEO
100
Base to emitter voltage
VEBO
7.0
Collector current (DC)
IC(DC)
5.0
Collector current (pulse)
IC(pulse)*
10
Base current (DC)
IB(DC)
2.5
Total power dissipation
PT (Tc = 25 °C)
18
Total power dissipation
PT (TA = 25 °C) 1.0**, 2.0***
Junction temperature
Tj 150
Storage temperature
Tstg 55 to +150
*: PW 10 ms, duty cycle 50%
**: Printing board mounted
***: 7.5 mm × 0.7 mm ceramic board mounted
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
(OHFWURGH &RQQHFWLRQ
 %DVH
 &ROOHFWRU
 (PLWWHU
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
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2002




 2SA1647
2SA1647, 2SA1647-Z
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage VCEO(SUS) IC = 2.5 A, IB = 0.25 A, L = 1 mH
Collector to emitter voltage
VCEX(SUS) IC = 2.5 A, IB1 = IB2 = 0.25 A,
VBE(OFF) = 1.5 V, L = 180 µH, clamped
Collector cutoff current
ICBO VCB = 100 V, IE = 0
Collector cutoff current
ICER VCE = 100 V, RBE = 50 , TA = 125 °C
Collector cutoff current
ICEX1
VCE = 100 V, VBE(OFF) = 1.5 V
Collector cutoff current
ICEX2
VCE = 100 V, VBE(OFF) = 1.5 V,
TA = 125 °C
Emitter cutoff current
IEBO
VEB(OFF) = 5.0 V, IC = 0
DC current gain
hFE1* VCE = 2.0 V, IC = 0.5 A
DC current gain
hFE2* VCE = 2.0 V, IC = 1.0 A
DC current gain
hFE3* VCE = 2.0 V, IC = 3.0 A
Collector saturation voltage VCE(sat)1* IC = 3.0 A, IB = 0.15 A
Collector saturation voltage VCE(sat)2* IC = 4.0 A, IB = 0.2 A
Base saturation voltage
VBE(sat)1* IC = 3.0 A, IB = 0.15 A
Base saturation voltage
VBE(sat)2* IC = 4.0 A, IB = 0.2 A
Collector capacitance
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Gain bandwidth product
fT VCE = 10 V, IC = 0.5 A
Turn-on time
Storage time
Fall time
ton IC = 3.0 A, RL = 17 ,
tstg IB1 = IB2 = 0.15 A, VCC ≅ −50 V
Refer to the test circuit.
tf
* Pulse test PW 350 µs, duty cycle 2%/Pulsed
hFE CLASSIFICATION
Marking
hFE2
M
100 to 200
L
150 to 300
K
200 to 400
SWITCHING TIME TEST CIRCUIT
MIN.
100
100
100
100
60
TYP.
110
90
MAX.
10
1.0
10
1.0
10
400
0.3
0.5
1.2
1.5
0.3
1.5
0.4
Unit
V
V
µA
mA
µA
mA
µA
V
V
V
V
pF
MHz
µs
µs
µs
Base current
waveform
Collector current
waveform
2 Data Sheet D14839EJ2V0DDS




 2SA1647
TYPICAL CHARACTERISTICS (TA = 25°C)
2SA1647, 2SA1647-Z
Case Temperature TC (°C)
Single pulse
Case Temperature TC (°C)
Single pulse
Collector to Emitter Voltage VCE (V)
Pulse Width PW (s)
Pulse test
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
Data Sheet D14839EJ2V0DDS
3




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