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Power MOSFET. STK0765FC Datasheet

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Power MOSFET. STK0765FC Datasheet
















STK0765FC MOSFET. Datasheet pdf. Equivalent













Part

STK0765FC

Description

Power MOSFET



Feature


www.DataSheet4U.com Semiconductor STK0 765FC Power MOSFET Features • Low Cr ss • Low gate charge. • Low leakag e current Ordering Information Type NO . STK0765FC Marking STK0765 Package Cod e TO-220F-3SL Outline Dimensions unit : mm PIN Connections 1. Gate 2. Drai n 3. Source www.DataSheet4U.com KST-H0 39-001 1 www.DataSheet4U.com STK0765F C Absolute maximum ratin.
Manufacture

AUK

Datasheet
Download STK0765FC Datasheet


AUK STK0765FC

STK0765FC; gs Characteristic Drain-source voltage G ate-source voltage Drain current (DC) * Drain current (Pulsed) * Drain power d issipation (Tc=25℃) Single pulsed ava lanche energy Avalanche current (Repeti tive) Repetitive avalanche energy Peak diode recovery dv/dt Junction temperatu re Storage temperature range * Limited by maximum junction temperature Symbol VDSS VGSS ID IDP PD.


AUK STK0765FC

② ① ① ③ EAS IAR EAR dv/dt TJ Ts tg Rating 650 ±30 TC=25℃ TC=100℃ 28 40 420 5.2 14.7 5.5 150 -55~150 7 4. 4 (TC=25℃) Unit V V A A A W mJ A mJ V/ns ℃ ℃ Thermal Resistance Charac teristic Thermal resistance junction-ca se Thermal resistance Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max 3.125 62.5 Units ℃/W www.DataSheet4 U.com KST-H039-001 2 www.DataSheet4U.c.


AUK STK0765FC

om STK0765FC Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-so urce cut-off current Gate leakage curre nt Static drain-source on-resistance Forward transfer conductance Input ca pacitance Output capacitance Reverse tr ansfer capacitance Turn-on delay time R ise time Turn-off delay time Fall time Total gate charge Ga.





Part

STK0765FC

Description

Power MOSFET



Feature


www.DataSheet4U.com Semiconductor STK0 765FC Power MOSFET Features • Low Cr ss • Low gate charge. • Low leakag e current Ordering Information Type NO . STK0765FC Marking STK0765 Package Cod e TO-220F-3SL Outline Dimensions unit : mm PIN Connections 1. Gate 2. Drai n 3. Source www.DataSheet4U.com KST-H0 39-001 1 www.DataSheet4U.com STK0765F C Absolute maximum ratin.
Manufacture

AUK

Datasheet
Download STK0765FC Datasheet




 STK0765FC
www.DataSheet4U.com
Semiconductor
Features
Low Crss
Low gate charge.
Low leakage current
Ordering Information
Type NO.
STK0765FC
Outline Dimensions
Marking
STK0765
STK0765FC
Power MOSFET
Package Code
TO-220F-3SL
unit : mm
www.DataSheet4U.com
KST-H039-001
PIN Connections
1. Gate
2. Drain
3. Source
1




 STK0765FC
www.DataSheet4U.com
Absolute maximum ratings
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Drain power dissipation (Tc=25)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Peak diode recovery dv/dt
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
Thermal Resistance
Characteristic
Thermal resistance junction-case
Thermal resistance Junction-ambient
STK0765FC
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
dv/dt
TJ
Tstg
Rating
650
±30
TC=25
TC=100
28
7
4.4
40
420
5.2
14.7
5.5
150
-55~150
(TC=25)
Unit
V
V
A
A
A
W
mJ
A
mJ
V/ns
Symbol
Rth(J-C)
Rth(J-A)
Typ.
-
-
Max
3.125
62.5
Units
/W
www.DataSheet4U.com
KST-H039-001
2




 STK0765FC
www.DataSheet4U.com
Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Static drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test Condition
ID=250 , VGS=0
ID=250 , VDS= VGS
VDS=650V, VGS=0
VDS=0V, VGS=±30V
VGS=10V, ID=3.5A
VDS=5V, ID=3.5A
VGS=0V, VDS=25V
f=1
VDD=325V, ID=7A
RG=25
Fig. 13
④⑤
VDS=520V, VGS=10V,
ID=7A
Fig. 12
④⑤
STK0765FC
(Tc=25°C)
Min. Typ. Max. Unit
650 - - V
2.0 - 4.0 V
- - 10 µA
- - ±100 nA
- - 1.2
3.9 6.4
-
S
- 881 -
- 123 -
pF
- 19 -
- 18 -
- 19 -
- 72 -
ns
- 28 -
- 49 -
- 8.4 -
nC
- 22.1 -
Source-Drain Diode Ratings and Characteristics
Characteristic
Symbol
Test Condition
(TC=25)
Min Typ Max Units
Source current (DC)
Source current (Pulsed)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS Integral reverse diode
ISP in the MOSFET
--
7
A
- - 28
VSD VGS=0V, IS=7A
- - 1.4 V
trr IS=7A
Qrr dIS/dt=100A/
- 320
- 2.4
-
-
ns
uC
Note ;
Repetitive rating : Pulse width limited by maximum junction temperature
L=15.7mH, IAS=7A, VDD=50V, RG=27
IS 7A, di/dt300A/, VDD=100V
Pulse Test : Pulse width400 , Duty cycle2%
Essentially independent of operating temperature
www.DataSheet4U.com
KST-H039-001
3




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