Noise Application. HZS6L1 Datasheet

HZS6L1 Application. Datasheet pdf. Equivalent

Part HZS6L1
Description (HZS-L Series) Silicon Epitaxial Planar Zener Diode for Low Noise Application
Feature www.DataSheet4U.com HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ.
Manufacture Renesas Technology
Datasheet
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HZS6L1
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HZS-L Series
Silicon Epitaxial Planar Zener Diode for
Low Noise Application
REJ03G0166-0200Z
(Previous: ADE-208-121A)
Rev.2.00
Jan.06.2004
Features
Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
stabilized power supply, etc.
Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
HZS-L Series
Mark
Type No.
Package Code
MHD
Pin Arrangement
B
12
2
Type No.
Cathode band
1. Cathode
2. Anode
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Rev.2.00, Jan.06.2003, page 1 of 6



HZS6L1
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HZS-L Series
Absolute Maximum Ratings
(Ta = 25°C)
Item
Power dissipation
Junction temperature
Storage temperature
Symbol
Pd
Tj
Tstg
Value
400
200
–55 to +175
Unit
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Zener Voltage
VZ (V)*1
Type
Grade Min
HZS6L A1
5.2
A2 5.3
A3 5.4
B1 5.5
B2 5.6
B3 5.7
C1 5.8
C2 6.0
C3 6.1
HZS7L A1
6.3
A2 6.4
A3 6.6
B1 6.7
B2 6.9
B3 7.0
C1 7.2
C2 7.3
C3 7.5
Note: 1. Tested with DC.
Max
5.5
5.6
5.7
5.8
5.9
6.0
6.1
6.3
6.4
6.6
6.7
6.9
7.0
7.2
7.3
7.6
7.7
7.9
Test
Condition
IZ (mA)
0.5
Reverse Current
Test
IR (µA) Condition
Max
VR (V)
1 2.0
Dynamic Resistance
rd ()
Test
Condition
Max
IZ (mA)
150 0.5
80 0.5
60 0.5
0.5 1 3.5 60 0.5
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Rev.2.00, Jan.06.2003, page 2 of 6





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