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SSP4N80AS
Advanced Power MOSFET
Description
www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 2.450 Ω (Typ.) SSP4N80AS BVDSS = 800 V RDS(on) = 3.0 Ω ID = 4.5 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Abso...
Fairchild Semiconductor
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