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D882P Datasheet, Equivalent, NPN Transistor.Si NPN Transistor Si NPN Transistor |
| Part | D882P |
|---|---|
| Description | Si NPN Transistor |
| Feature | www.DataSheet4U.com YOUDA TRANSISTOR Si NPN TRANSISTOR¡ª DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 40V *Collector current up to 3A *High hFE linearity D882 D882 PIN CONFIGURATIONS PIN 1 2 3 SYMBOL Emitter Collector Base ABSOLUTE MAXIMUM RATINGS (Tamb=25¡æ ) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-Base Voltage BVEBO Tcase=25¡æ Collector Dissipation PCM Tamb=25¡æ DC ICM Collector Current Pulse Icp Base Current IB Junction Temperature Tj Storage Temperature Tstg VALUE 40 30 5 10 1 3 7 0.6 +150 -55¡« +150 UNIT V V V W W A A A ¡. |
| Manufacture | Wuxi Youda Electronics |
| Datasheet |
| Part | D882P |
|---|---|
| Description | Si NPN Transistor |
| Feature | www.DataSheet4U.com YOUDA TRANSISTOR Si NPN TRANSISTOR¡ª DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 40V *Collector current up to 3A *High hFE linearity D882 D882 PIN CONFIGURATIONS PIN 1 2 3 SYMBOL Emitter Collector Base ABSOLUTE MAXIMUM RATINGS (Tamb=25¡æ ) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-Base Voltage BVEBO Tcase=25¡æ Collector Dissipation PCM Tamb=25¡æ DC ICM Collector Current Pulse Icp Base Current IB Junction Temperature Tj Storage Temperature Tstg VALUE 40 30 5 10 1 3 7 0.6 +150 -55¡« +150 UNIT V V V W W A A A ¡. |
| Manufacture | Wuxi Youda Electronics |
| Datasheet |
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