NPN Transistor. D882P Datasheet

D882P Transistor. Datasheet pdf. Equivalent

D882P Datasheet
Recommendation D882P Datasheet
Part D882P
Description Si NPN Transistor
Feature D882P; www.DataSheet4U.com YOUDA TRANSISTOR Si NPN TRANSISTOR¡ª DESCRIPTION AND FEATURES *Collector-Emitte.
Manufacture Wuxi Youda Electronics
Datasheet
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Wuxi Youda Electronics D882P
www.DataSheet4U.com
YOUDA TRANSISTOR
D882
Si NPN TRANSISTOR D882
DESCRIPTION AND FEATURES
*Collector-Emitter voltage: BVCBO= 40V
*Collector current up to 3A
*High hFE linearity
PIN CONFIGURATIONS
PIN SYMBOL
1 Emitter
2 Collector
3 Base
ABSOLUTE MAXIMUM RATINGS (Tamb=25 )
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
BVCBO
BVCEO
BVEBO
Collector Dissipation
Tcase=25
Tamb=25
Collector Current
DC
Pulse
Base Current
Junction Temperature
PCM
ICM
Icp
IB
Tj
Storage Temperature
Tstg
VALUE
40
30
5
10
1
3
7
0.6
+150
-55 +150
UNIT
V
V
V
W
W
A
A
A
ELECTRICAL CHARACTERISTICS (Tamb=25 ,all voltage referenced to GND Unless otherwise specified)
PARAMETER
SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
VcB=30V, IE=0
VEB=3V, IC=0
VcE=2V, IC=20mA
VcE=2V, IC=1A
Ic=2A, IB=0.2A
Ic=2A, IB=0.2A
VcE=5V, IC=0.1A
VcB=10V,
IE=0,f=1MHz
100 nA
100 nA
30 200
100 400
0.3 0.5
V
1.0 2.0
V
80 MHz
45 pF
CLASSIFICATION OF hFE
RANK
RANGE
Q
100 200
P
160 320
E
200 400
WuXi YouDa Electronics Co., Ltd
Add: No.5 Xijin Road, National Hi-Tech Industrial Development Zone, Wuxi Jiangsu China
wwwTe.Dl: at8a6S-5h10e-5e2t045U11.7com86-510-5205108 Fax: 86-510-5205110
Website: www.e-youda.com
SHENZHEN OFFICE Tel 86-755-83740369 13823533350 Fax 86-755-83741418
Ver 3.1
1 of 1
2004-9-20





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