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D882P Datasheet, Equivalent, NPN Transistor.Si NPN Transistor Si NPN Transistor |
| Part | D882P |
|---|---|
| Description | Si NPN Transistor |
| Feature | www. DataSheet4U. com YOUDA TRANSISTOR Si NPN TRANSISTOR¡ª DESCRIPTION AND FEA TURES *Collector-Emitter voltage: BVCBO = 40V *Collector current up to 3A *High hFE linearity D882 D882 PIN CONFIGU RATIONS PIN 1 2 3 SYMBOL Emitter Collec tor Base ABSOLUTE MAXIMUM RATINGS (Tam b=25¡æ ) PARAMETER SYMBOL Collector-B ase Voltage BVCBO Collector-Emitter Vol tage BVCEO Emitter-Base Voltage BVEBO T case=25¡æ Collector Dissipation PCM T amb=25¡æ DC ICM Collector Current Pul se Icp Base Current IB Junction Tempera ture Tj Storage Temperature Tstg VALUE 40 30 5 10 1 3 7 0. 6 +150 -55¡« +150 UNIT V V V W W A A A ¡ . |
| Manufacture | Wuxi Youda Electronics |
| Datasheet |
| Part | D882P |
|---|---|
| Description | Si NPN Transistor |
| Feature | www. DataSheet4U. com YOUDA TRANSISTOR Si NPN TRANSISTOR¡ª DESCRIPTION AND FEA TURES *Collector-Emitter voltage: BVCBO = 40V *Collector current up to 3A *High hFE linearity D882 D882 PIN CONFIGU RATIONS PIN 1 2 3 SYMBOL Emitter Collec tor Base ABSOLUTE MAXIMUM RATINGS (Tam b=25¡æ ) PARAMETER SYMBOL Collector-B ase Voltage BVCBO Collector-Emitter Vol tage BVCEO Emitter-Base Voltage BVEBO T case=25¡æ Collector Dissipation PCM T amb=25¡æ DC ICM Collector Current Pul se Icp Base Current IB Junction Tempera ture Tj Storage Temperature Tstg VALUE 40 30 5 10 1 3 7 0. 6 +150 -55¡« +150 UNIT V V V W W A A A ¡ . |
| Manufacture | Wuxi Youda Electronics |
| Datasheet |
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