Rectifier DIE. 1C5819A Datasheet

1C5819A DIE. Datasheet pdf. Equivalent

Part 1C5819A
Description (1C5819A - 1C5819C) Silicon Schottky Rectifier DIE
Feature www.DataSheet4U.com SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 676, REV. - 1C5819A/B/C SIL.
Manufacture Sensitron
Datasheet
Download 1C5819A Datasheet



1C5819A
www.DataSheet4U.com
SENSITRON
SEMICONDUCTOR
1C5819A/B/C
TECHNICAL DATA
DATA SHEET 676, REV. -
SILICON SCHOTTKY RECTIFIER DIE
Very Low Forward Voltage Drop
Applications:
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
Features:
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche Current
Max. Junction Temperature
Max. Storage Temperature
Electrical Characteristics:
Symbol
VRWM
IF(AV)
IFSM
EAS
IAR
TJ
Tstg
Condition
-
50% duty cycle, rectangular
wave form
8.3 ms, Sine pulse (1)
TJ = 25 °C, IAS = 0.18 A,
L = 160 mH
IAS decay linearly to 0 in 1 µs
ƒ limited by TJ max VA=1.5VR
-
-
Max.
45
1
25
2.6
0.18
-55 to +125
-55 to +150
Units
V
A
A
mJ
A
°C
°C
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Max. Junction Capacitance
(1) in SHD package
Symbol
VF1
VF2
IR1
IR2
CT
Condition
@ 1A, Pulse, TJ = 25 °C
@ 1A, Pulse, TJ = 100 °C
@VR = 45V, Pulse,
TJ = 25 °C
@VR = 45V, Pulse,
TJ = 100 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
Max.
0.49
0.45
50
5.0
70
Units
V
V
µA
mA
pF
221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com



1C5819A
www.DataSheet4U.com
TECHNICAL DATA
DATA SHEET 676, REV. -
Mechanical Dimensions: In Inches / mm
1C5819A/B/C
0.034 ± 0.003 0.040 ± 0.003
(0.86 ± 0.077) (1.02 ± 0.077)
H
Bottom side metalization Ag - 30 kÅ minimum.
Top side metalization Al - 25 kÅ minimum
or Ag - 30 kÅ minimum.
Bottom side is cathode, top side is anode.
Dimension H = 0.0105 ± 0.001 (0.27 ± 0.026) for Al top;
Dimension H = 0.0155 ± 0.001 (0.39 ± 0.026) for Ag top.
Typical Forward Characteristics
100
125 °C
10-1
10-2
100 °C
25 °C
10-3
0.0
0.1 0.2 0.3 0.4 0.5
Forward Voltage Drop - V F (V)
0.6
Typical Reverse Characteristics
10 2
150 °C
10 1
125 °C
10 0 100 °C
75 °C
10-1
50 °C
10-2
25 °C
10-3
0
50
10 20 30 40 50
Reverse Voltage - VR (V)
Typical Junction Capacitance
60
40
30
20
10
0
10 20 30 40 50
Reverse Voltage - VR (V)
60
221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)