Planar Transistor. 2SC5132A Datasheet

2SC5132A Transistor. Datasheet pdf. Equivalent

Part 2SC5132A
Description Silicon NPN Triple Diffused Planar Transistor
Feature www.DataSheet4U.com 2SC5132A Silicon NPN Triple Diffused Planar Application Character display hori.
Manufacture Hitachi Semiconductor
Datasheet
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2SC5132A
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2SC5132A
Silicon NPN Triple Diffused Planar
Application
Character display horizontal deflection output
Features
• High breakdown voltage
VCES = 1500 V, IC = 8 A
• Built–in damper diode type
• Isolated package
TO-3P•FM
TO–3PFM (N)
C
B 1. Base
2. Collector
1
2
3. Emitter
E3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
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Collector to emitter voltage
VCES
1500
V
———————————————————————————————————————————
Emitter to base voltage
VEBO
6
V
———————————————————————————————————————————
Collector current
IC 8 A
———————————————————————————————————————————
Collector surge current
ic(surge)
16
A
———————————————————————————————————————————
Collector power dissipation
PC*1
50
W
———————————————————————————————————————————
Junction temperature Tj 150 °C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
Diode current
ID 6 A
———————————————————————————————————————————
Note: 1. Value at Tc = 25°C
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2SC5132A
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2SC5132A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
———————————————————————————————————————————
Emitter to base breakdown
voltage
V(BR)EBO 6
— — V IE = 400 mA, IC = 0
———————————————————————————————————————————
Collector cutoff current
ICES
500 µA
VCE = 1500 V, RBE = 0
———————————————————————————————————————————
DC current transfer ratio
hFE — — 25 — VCE = 5 V, IC = 1 A
———————————————————————————————————————————
Collector to emitter saturation VCE(sat) — — 5
voltage
V IC = 5 A, IB = 1.25 A
———————————————————————————————————————————
Base to emitter saturation
voltage
VBE(sat) — — 1.5 V IC = 5 A, IB = 1.25 A
———————————————————————————————————————————
Forward voltage of damper
diode
VECF
— — 2.0 V IF = 6 A
———————————————————————————————————————————
Fall time
tf — 0.2 0.4 µsec ICP = 5 A, IB1 = 1 A,
fH = 31.5kHz
———————————————————————————————————————————
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Maximum Collector Power
Dissipation Curve
80
60
40
20
0 50 100 150 200
Case Temperature Tc (°C)
Area of Safe Operation
20
f = 15.75 kHz
(100 V, 16 A)
Ta = 25 °C
For picture tube arcing
10
(800 V, 3 A)
0.5 mA
0 400 800 1200 1600 2000
Collector to Emitter Voltage V CE (V)
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