Power MOSFET. IRFP360 Datasheet

IRFP360 MOSFET. Datasheet pdf. Equivalent


Intersil Corporation IRFP360
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Data Sheet
IRFP360
July 1999 File Number 2290.3
23A, 400V, 0.200 Ohm, N-Channel Power
MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
N-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17464.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP360
TO-247
IRFP360
NOTE: When ordering, use the entire part number.
Features
• 23A, 400V
• rDS(ON) = 0.200
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
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Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
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4-341
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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IRFP360 Datasheet
Recommendation IRFP360 Datasheet
Part IRFP360
Description N-Channel Power MOSFET
Feature IRFP360; www.DataSheet4U.com IRFP360 Data Sheet July 1999 File Number 2290.3 23A, 400V, 0.200 Ohm, N-Channe.
Manufacture Intersil Corporation
Datasheet
Download IRFP360 Datasheet




Intersil Corporation IRFP360
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IRFP360
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFP360
400
400
23
14
92
±20
250
2
1200
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
300
260
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
Drain to Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(TH)
ID = 250µA, VGS = 0V (Figure 10)
VGS = VDS, ID = 250µA
400 -
2-
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
-
-
-
-
On-State Drain Current (Note 2)
www.DataSheet4U.comGate to Source Leakage Current
ID(ON)
IGSS
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
VGS = ±20V
23
-
On Resistance (Note 2)
rDS(ON) ID = 13A, VGS = 10V (Figures 8, 9)
-
Forward Transconductance (Note 2)
gfs VDS 50V, IDS > 13A (Figure 12)
14
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(ON)
tr
td(OFF)
VDD = 200V, ID 25A, RGS = 4.3Ω, VGS = 10V,
RL = 7.5
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
-
-
-
-
0.18
21
22
94
80
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
tf
Qg(TOT)
Qgs
Qgd
CISS
VGS = 10V, ID = 25A, VDS = 0.8 x Rated BVDSS
IG(REF) = 1.5mA (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature
VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)
- 66
- 68
- 17
- 24
- 4000
Output Capacitance
Reverse Transfer Capacitance
COSS
CRSS
- 550
- 97
Internal Drain Inductance
Internal Source Inductance
LD Measured between the Modified MOSFET
- 5.0
Contact Screw on Header Symbol Showing the
closer to Source and Gate Internal Device
Pins and Center of Die Inductances
LS Measured from the Source
Lead, 6mm (0.25in) from
Header and Source
D - 13
LD
Bonding Pad
G
LS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
Free Air Operation
S
--
--
MAX
-
4
25
250
-
±100
0.20
-
33
140
120
99
100
UNITS
V
V
µA
µA
A
nA
S
ns
ns
ns
ns
nC
- nC
- nC
- pF
- pF
- pF
- nH
- nH
0.50
30
oC/W
oC/W
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Intersil Corporation IRFP360
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IRFP360
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 2)
SYMBOL
ISD
ISDM
TEST CONDITIONS
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Rectifier
G
MIN TYP MAX UNITS
-
- 23
A
D
-
- 92
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
TJ = 25oC, ISD = 23A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 25A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 25A, dISD/dt = 100A/µs
--
200 460
3.1 7.1
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 4mH, RG = 25Ω, Peak IAS = 23A.
1.8
1000
16
Typical Performance Curves Unless Otherwise Specified
V
ns
µC
1.2 25
1.0 20
0.8
15
0.6 www.DataShee10 t4U.com
0.4
5
0.2
0
0 50 100
TC, CASE TEMPERATURE (oC)
150
0
25 50
75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.1 0.2
0.1
0.05
10-2
0.02
0.01
10-3
10-5
SINGLE PULSE
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (S)
FIGURE 3. TRANSIENT THERMAL IMPEDANCE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
1 10
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