2SB772 Datasheet (data sheet) PDF





2SB772 Datasheet, PNP SILICON POWER TRANSISTOR

2SB772   2SB772  

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www.DataSheet4U.com DATA SHEET PNP SIL ICON POWER TRANSISTOR 2SB772 PNP SILI CON POWER TRANSISTOR DESCRIPTION The 2 SB772 is PNP silicon transistor suited for the output stage of 3 W audio ampli fier, voltage regulator, DC-DC converte r and relay driver. PACKAGE DRAWING (U nit: mm) 8.5 MAX. 3.2 ±0.2 3.8 ±0.2 2.8 MAX. FEATURES • Low saturation v oltage VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A) • Excellent hFE li nearity and high hFE hFE = 60 to 400 (V CE = −2 V, IC = −1 A) • Less cram ping space required due to small and th in package and reducing the trouble for attachment to a radiator. No insulator bushing required. 12.0 MAX. 2.5 ±0.2 13.0 MI

2SB772 Datasheet, PNP SILICON POWER TRANSISTOR

2SB772  
N. ABSOLUTE MAXIMUM RATINGS Maximum Tem perature Storage Temperature −55 to + 150°C Junction Temperature 150°C Maxi mum Maximum Power Dissipation 1.0 W Tot al Power Dissipation (TA = 25°C) 10 W Total Power Dissipation (TC = 25°C) Ma ximum Voltages and Currents (TA = 25°C ) Collector to Base Voltage −40 V VCB O Collector to Emitter Voltage −30 V VCEO Emitter to Base Voltage −5.0 V V EBO Collector Current (DC) −3.0 A IC( DC) IC(pulse)Note Collector Current (pu lse) −7.0 A Note Pulse Test PW ≤ 35 0 µs, Duty Cycle ≤ 2% 12 TYP. 0.55 +0.08 –0.05 0.8 +0.08 –0.05 1.2 TYP. 2.3 TYP. 2.3 TYP. 1: Emitter 2: Collector: connected to mounting plane 3: Base ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTIC DC Current Gai n DC Current Gain Gain Bandwidth Produc t Output Capacitance Collector Cutoff C urrent SYMBOL hFE1 hFE2 fT Cob ICBO IEB O VCE(sat) VBE(sat) TEST CONDITIONS VCE = −2.0 V, IC = −20 mA VCE = −5.0 V, IC = −0.1 A VCB = −10 V, IE = 0 , f = 1.0 MHz VCB = −30 V, IE = 0 A V EB = −3.0 V, IC = 0 A IC = −2.0 A, IB = −0.2 A IC = −2.0 A, IB = −0. 2 A Note Note Note Note MIN. 30 60 TY P. 220 160 80 55 MAX. 400 UNIT VCE = −2.0 V, IC = −1.0 mA MHz pF −1. 0 −1.0 ww.DataSheet4U.com Emitter C utoff Current Collector Saturation Voltage Base Saturation Voltage µA µA V V −0.3 −1.0 −0.5 −2.0 Note Pu








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