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Switching Diode. 1N4148W-V Datasheet

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Switching Diode. 1N4148W-V Datasheet






1N4148W-V Diode. Datasheet pdf. Equivalent




1N4148W-V Diode. Datasheet pdf. Equivalent





Part

1N4148W-V

Description

Small Signal Fast Switching Diode



Feature


www.vishay.com 1N4148W-V Vishay Semicon ductors Small Signal Fast Switching Di ode MECHANICAL DATA Case: SOD-123 Weig ht: approx. 10.3 mg Packaging codes/opt ions: GS18/10K per 13" reel (8 mm tape) , 10K/box GS08/3K per 7" reel (8 mm tap e), 15K/box FEATURES • These diodes are also available in other case styles including the DO-35 case with the type designation 1N4148,.
Manufacture

Vishay Intertechnology

Datasheet
Download 1N4148W-V Datasheet


Vishay Intertechnology 1N4148W-V

1N4148W-V; the MiniMELF case with the type designa tion LL4148, and the SOT-23 case with t he type designation IMBD4148-V. • Sil icon epitaxial planar diode • Fast sw itching diodes • AEC-Q101 qualified Material categorization: For definit ions of compliance please see www.visha y.com/doc?99912 PARTS TABLE PART ORD ERING CODE 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 TYPE MARK.


Vishay Intertechnology 1N4148W-V

ING A2 INTERNAL CONSTRUCTION Single dio de REMARKS Tape and reel ABSOLUTE MAX IMUM RATINGS (Tamb = 25 °C, unless oth erwise specified) PARAMETER TEST COND ITION SYMBOL Reverse voltage Repetiti ve peak reverse voltage Average rectifi ed current half wave rectification with resistive load (1) f  50 Hz VR VR RM IF(AV) Surge forward current Power dissipation (1) t < .


Vishay Intertechnology 1N4148W-V

1 s and Tj = 25 °C IFSM Ptot VALUE 75 100 150 500 350 THERMAL CHARACTERISTI CS (Tamb = 25 °C, unless otherwise spe cified) PARAMETER TEST CONDITION SYM BOL Thermal resistance junction to amb ient air (1) Junction temperature Stora ge temperature RthJA Tj Tstg Note (1) Valid provided that electrodes are kep t at ambient temperature. VALUE 375 15 0 - 65 to + 150 UNI.

Part

1N4148W-V

Description

Small Signal Fast Switching Diode



Feature


www.vishay.com 1N4148W-V Vishay Semicon ductors Small Signal Fast Switching Di ode MECHANICAL DATA Case: SOD-123 Weig ht: approx. 10.3 mg Packaging codes/opt ions: GS18/10K per 13" reel (8 mm tape) , 10K/box GS08/3K per 7" reel (8 mm tap e), 15K/box FEATURES • These diodes are also available in other case styles including the DO-35 case with the type designation 1N4148,.
Manufacture

Vishay Intertechnology

Datasheet
Download 1N4148W-V Datasheet




 1N4148W-V
www.vishay.com
1N4148W-V
Vishay Semiconductors
Small Signal Fast Switching Diode
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• These diodes are also available in other case
styles including the DO-35 case with the type
designation 1N4148, the MiniMELF case with the
type designation LL4148, and the SOT-23 case
with the type designation IMBD4148-V.
• Silicon epitaxial planar diode
• Fast switching diodes
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART
ORDERING CODE
1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08
TYPE MARKING
A2
INTERNAL CONSTRUCTION
Single diode
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Repetitive peak reverse voltage
Average rectified current half wave
rectification with resistive load (1)
f 50 Hz
VR
VRRM
IF(AV)
Surge forward current
Power dissipation (1)
t < 1 s and Tj = 25 °C
IFSM
Ptot
VALUE
75
100
150
500
350
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
Junction temperature
Storage temperature
RthJA
Tj
Tstg
Note
(1) Valid provided that electrodes are kept at ambient temperature.
VALUE
375
150
- 65 to + 150
UNIT
V
V
mA
mA
mW
UNIT
K/W
°C
°C
Rev. 1.5, 27-Jul-12
1 Document Number: 85748
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 1N4148W-V
www.vishay.com
1N4148W-V
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Forward voltage
Leakage current
Diode capacitance
Voltage rise when switching ON
Reverse recovery time
Rectification efficiency
IF = 10 mA
IF = 100 mA
VR = 20 V
VR = 75 V
VR = 100 V
VR = 20 V, TJ = 150 °C
VF = VR = 0 V
Tested with 50 mA pulses,
tp = 0.1 μs, rise time < 30 ns,
fp = (5 to 100) kHz
IF = 10 mA, iR = 1 mA, VR = 6 V,
RL = 100
f = 100 MHz, VRF = 2 V
VF
VF
IR
IR
IR
IR
CD
Vfr
trr

0.45
MAX.
1000
1200
25
5
100
50
4
2.5
4
UNIT
mV
mV
nA
μA
μA
μA
pF
V
ns
RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT
60 Ω
VRF = 2 V
2 nF
5 kΩ
VO
17436
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
103
102
Tj = 100 °C
Tj = 25 °C
10
1
10-1
10-2
0
17437
1
VF (V)
Fig. 1 - Forward Characteristics
2
104
5
2
103
5
2
102
5
2
10
5
2
17438
10-2
Tj = 25 °C
f = 1 kHz
10-1 1 10
IF (mA)
102
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Rev. 1.5, 27-Jul-12
2 Document Number: 85748
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 1N4148W-V
www.vishay.com
1N4148W-V
Vishay Semiconductors
500
450
400
350
300
250
200
150
100
50
20809
0
0
50 100
Tamb - Ambient Temperature (°C)
150
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
104
5
2
103
5
2
102
5
2
10
5
2
1
17441
0
VR = 20 V
100
Tj (°C)
200
Fig. 5 - Leakage Current vs. Junction Temperature
1.1 Tj = 25 °C
f = 1 MHz
1.0
0.9
0.8
0.7
0 2 4 6 8 10
17440
VR (V)
Fig. 4 - Relative Capacitance vs. Reverse Voltage
100
5
4
3
2
10
5
4 0.1
3
2 0.2
1 0.5
5
4
3
2
0.1
10-5
2
17442
n=0
I
n = t /T T = 1/f
PP
I
FRM
t
P
T
t
5 10-4
2
5 10-3
2
5 10-2
2
5 10-1
2
51
2
tP (s)
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
5 10
Rev. 1.5, 27-Jul-12
3 Document Number: 85748
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000






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