Tilt Direction. GP1S036HEZ Datasheet

GP1S036HEZ Direction. Datasheet pdf. Equivalent

Part GP1S036HEZ
Description Photointerrupter for Detecting Tilt Direction
Feature www.DataSheet4U.com GP1S036HEZ GP1S036HEZ I Features 1. Subminiature (with built-in super compact b.
Manufacture Sharp
Datasheet
Download GP1S036HEZ Datasheet




GP1S036HEZ
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GP1S036HEZ
GP1S036HEZ
Photointerrupter for Detecting
Tilt Direction
I Features
1. Subminiature
(with built-in super compact ball for detecting tilt direction)
2. 2-phase output type (4
3. Able to detect the tilt direction of both side (±90˚) by the
position of rolling ball.
4. High reliability due to non-contact structure
I Applications
1. Digital cameras
2. Camcoders
I Outline Dimensions
(Unit : mm)
Top View
Internal connection diagram
32
PT2
4
PT1
or show GATE Position
4.5
5
1 Anode
2 Cathode
3 Emitter2
4.6
1
4 Emitter1
5 Collector
I Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol Rating
Unit
Forward current
IF
50 mA
Input Reverse voltage
VR
6
V
Power dissipation
P
75 mW
Collector-emitter
voltage
Output
Emitter-collector
voltage
Collector current
VCE1O
VCE2O
VE1CO
VE2CO
IC
35 V
5
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6V
3
20 mA
Collector Power dissipation PC
75 mW
Total power dissipation
Ptot
100 mW
Operating temperature
Storage temperature
*1 Soldering temperature 1
Topr 25 to +85 ˚C
Tstg 40 to +100 ˚C
Tsol 260 ˚C
*1 For MAX. 5s
3.35
13
0.15 0.4
1.27
1.27
1 Unspecified tolerance : ±0.2mm
The dimensions indicated by refer to
those measured from the lead base.
DataShee
2 Burr is not included in the dimensions.
Burr's dimensions : 0.15MAX.
1mmMIN.
Soldering area
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Notice In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
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GP1S036HEZ
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I Electro-optical Characteristics
Parameter
Symbol
Input
*3 Output
Forward voltage
Reverse current
Collector dark current
VF
IR
ICEO
Collector current
*3 Coupling *4 Leak current
Characteristics Response time
Rise time
Fall time
IC
ILEAK
tr
tf
Collector-emitter saturation voltage VCE(sat)
*3 Output and coupling characteristics are common to the both phototransistors
*4 Characteristics except leak current is measured at θ=180˚, φ=0˚
Leak current is the output current of transistor when θ=±90˚, φ=0˚ and IC=OFF
Conditions
IF=20mA
VR=3V
VCE=20V
VCE=5V, IF=5mA
VCE=5V, IF=5mA
VCE=5V, IC=100µA
RL=1k
IF=10mA, IC=55µA
GP1S036HEZ
MIN.
55
TYP.
1.2
50
50
(Ta=25˚C)
MAX. Unit
1.4 V
10 µA
100 nA
300 µA
17 µA
150 µs
150 µs
0.4 V
I Detecting Angle Characteristics
θ 0˚
IC1
IC2 OFF
30˚ 60˚
OFF
*5
120˚ 150˚
*5
ON
210˚
ON
*5
Device state diagram
−+
φ
−+
θ
θ 240˚ 300˚ 330˚
IC1 ON
*5
IC2 *5
OFF
Conditions : IF=5mA, VCE=5V, φ=±5˚
*5 Indefinite
360˚
OFF
PT
et4U.comIICC12
:
:
Output
Output
current
current
of
of
phototransistors
phototransistors
PT1
PT2
θ : Device condition : Refer to the figure
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Gravity direction
φ : Device condition : Refer to the figure
ON :Output current of phototransistors : 55µA or more
OFF : Output current of phototransistors : 17µA or less
Output current of ON/OFF is output when device is at a standstill
GL
Gravity direction
(Viewing from detecting side)
DataShee
I Supplement
(Viewing from detecting side)
PT1
PT2
Gravity direction
PT2
PT1
PT1 output
(ON)
PT2 output
(ON)
(ON)
(OFF)
(OFF)
(OFF)
(OFF)
(ON)
(ON)
(ON)
PT : Detecting
PT : Opaque
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