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NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
HIGH GAIN BANDWIDTH: fT = 21 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM GAIN: 20 dB at f = 2 GHz
2
NE66719
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 19
1.6±0.1 0.8±0.1
1.6±0.1
1.0
0.2
NEC's NE66719 is fabricated using NEC's UHS0 25 GHz fT wafer process. ...
