2SD1911. D1911 Datasheet

D1911 Datasheet PDF, Equivalent


Part Number

D1911

Description

2SD1911

Manufacture

Wing Shing Computer Components

Total Page 1 Pages
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Download D1911 Datasheet PDF


D1911 Datasheet
2SD1911
Silicon Diffused Power Transistor
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
plastic envelope with integrated efficiency diode,prim-
arily for use in horizontal deflection circuites of colour
television receivers
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
Icsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0V
TO-3PFM
Tmb 25
IC = 4.0A; IB = 0.8A
f = 16KHz
IF = 4.5A
ICsat = 4.0A; f = 16KHz
TYP MAX UNIT
- 1500 V
- 600 V
- 5A
- 10 A
- 50 W
- 5V
4.5 -
A
1.6 2.0
V
1.0 s
LIMITING VALUES
SYMBOL
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
Tmb 25
MIN MAX UNIT
-
1500
V
- 600 V
- 5A
- 10 A
-A
-A
- 50 W
-65 150
- 150
ELECTRICAL CHARACTERISTICS
SYMBOL
ICE
ICES
VCEOsust
VCEsat
VBEsat
hFE
VF
fT
Cc
ts
tf
PARAMETER
Collector cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time
CONDITIONS
VBE = 0V; VCE = VCESMmax
VBE = 0V; VCE = VCESMmax
Tj = 125
IB = 0A; IC = 100mA
L = 25mH
IC = 4.0A; IB = 0.8A
IC = 4.0A; IB = 0.8A
IC = 1.0A; VCE = 5V
IF = 4.5A
IC = 0.1A; VCE = 10V
VCB = 10V
Ic=4A,IB(end)=0.8A,VCC=105V
Ic=4A,IB(end)=0.8A,VCC=105V
TYP MAX UNIT
- 1.0 mA
- 2.5 mA
-V
- 5.0 V
- 1.5 V
8
1.6 2.0
V
3 - MHz
110 -
pF
-s
0.7 1.0
s
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com


Features Datasheet pdf 2SD1911 GENERAL DESCRIPTION Silicon Dif fused Power Transistor Highvoltage,hig h-speed switching npn transistors in a plastic envelope with integrated effici ency diode,primarily for use in horizon tal deflection circuites of colour tele vision receivers QUICK REFERENCE DATA SYMBOL TO-3PFM CONDITIONS VBE = 0V TYP VCESM VCEO IC ICM Ptot VCEsat Icsat V F tf PARAMETER Collector-emitter volta ge peak value Collector-emitter voltage (open base) Collector current (DC) Col lector current peak value Total power d issipation Collector-emitter saturation voltage Collector saturation current D iode forward voltage Fall time Tmb 25 IC = 4.0A; IB = 0.8A f = 16KHz IF = 4.5 A ICsat = 4.0A; f = 16KHz 4.5 1.6 MAX 1500 600 5 10 50 5 2.0 1.0 UNIT V V A A W V A V s LIMITING VALUES SYMBOL V CESM VCEO IC ICM IB IBM Ptot Tstg Tj P ARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value To.
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