2SA1988. A1988 Datasheet

A1988 2SA1988. Datasheet pdf. Equivalent

Part A1988
Description 2SA1988
Feature DATA SHEET Silicon Power Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE .
Manufacture NEC
Datasheet
Download A1988 Datasheet



A1988
DATA SHEET
Silicon Power Transistor
2SA1988
PNP SILICON TRANSISTOR
POWER AMPLIFIER
INDUSTRIAL USE
DESCRIPTION
The 2SA1988 is PNP Silicon Power Transistor that
www.DataSheet4dUe.scoigmned for audio frequency power amplifier.
FEATURES
High Voltage VCEO = 200 V
DC Current Gain hFE = 70 to 200
TO-3P Package
PACKAGE DIMENSIONS
15.7 MAX. φ 3.2±0.2
4
4.7 MAX.
1.5
123
ORDERING INFORMATION
Type Number
Package
2SA1988
MP-88
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
200
Collector to Emitter Voltage
VCEO
200
Emitter to Base Voltage
VEBO
5.0
Collector Current (DC)
IC (DC)
7.0
2.2±0.2
1.0±0.2 0.6±0.1 2.8±0.1
5.45 5.45
V 1.Base
V
2.Collector
3.Emitter
V
MP-88
4.Fin (Collector)
A
Collector Current (pulse)
IC (pulse) *1
-10
A
Total Power Dissipantion
P2 *2
100 W
JunctionTemperature
TJ 150 °C
Storage Tempreature
Tstg 55 to +150 °C
*1 PW 300 µs, Duty Cycle 10 % *2 TC = 25 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
SYMBOL MIN.
TYP.
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE1
70
DC Current Gain
hFE2
20
Collector Saturation Voltage
VCE (sat)
0.6
Base Saturation Voltage
VBE (sat)
1.3
Gain Band width Product
fT
40
Output Capacitance
Cob
270
Pulse Test PW 350 µs, Duty Cycle 2 %
MAX.
50
50
200
2.0
2.0
UNIT
µA
µA
V
V
MHz
pF
TEST CONDITIONS
VCB = 200 V, IE = 0
VEB = 3.0 V, IC = 0
VCE = 5.0 V, IC = 1.0 A
VCE = 5.0 V, IC = 3.5 A
IC = 5.0 V, IE = 0.5 V
IC = 5.0 V, IE = 0.5 V
VCE = 5.0 V, IC = 1.0 mA
VCB = 10 V, IC = 0, f = 1.0 MHz
The information in this document is subject to change without notice.
Document No. D11176EJ1V0DS00 (1st edition)
Date Published May 1996 P
Printed in Japan
© 1996



A1988
2SA1988
CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
www.DataSheet4U.com
0
DissipationS/LbimLitiemdited
50 100
TC - Case Temperature - °C
150
FORWARD BIAS SAFE OPERATING AREA
-100
-10
-1
IC(Pulse)
IC(DC)
Dissipation
PW=1ms
Limited
10ms
100ms
200ms
TC = 25 °C
-0.1 Single Pulse
-1 -10
-100
-1000
VCE - Collector to Emitter Voltage - V
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TC - Case Temperature - °C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
-12 IB=120mA Pulsed
-10 100mA
80mA
-8
60mA
-6
40mA
-4
20mA
-2
0 -10 -20 -30
VCE - Collector to Emitter Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
Rth (J-C)
1
0.1
0.01
100 µ
1m
10 m
100 m
1
PW - Pulse Width - s
10
Single Pulse
TC=25°C
100 1 000
2







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