Thyristors. BTW38 Datasheet

BTW38 Thyristors. Datasheet pdf. Equivalent

Part BTW38
Description Thyristors
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Manufacture NXP
Datasheet
Download BTW38 Datasheet




BTW38
J BTW38 SERIES
-------------------------------------------------------'
THYRISTORS
Also available to BS9341-F082
Silicon thyristors in metal envelopes, intended for use in power control circuits (e.g. light and motor
control) and power switching systems.
The series consists of reverse polarity types (anode to stud) identified by a suffix R: BTW38-600R to
1200R.
QUICK REFERENCE DATA
BTW3B-600R BOOR 1000R 1200R
Repetitive peak voltages
800 1000 1200 V
Average on-state current
R.M.S. on-state current
Non-repetitive peak on-state current
MECHANICAL DATA
Fig. 1 TO-64: with metric M5 stud 5 mm); e.g. BTW38-600R.
IT(AV)
IT(RMS)
ITSM
max.
max.
max.
10 A
16 A
150 A
Dimensions in mm
+-
1,9 (2x)
1,6
-=.;;-8_,,98-1 _I
max
9,3
max
I. - - 11,5 _ _ ~ max 21,72 - - - - i....1
10,72
max
Net mass: 7 g
Diameter of clearance hole: max. 5,2 mm
Accessories supplied on request:
56295 (PTFE bush, 2 mica washers, plain washer, tag)
56262A (mica washer, insulating ring, plain washer)
Supplied with device: 1 nut, 1 lock washer
Nut dimensions: across the flats; M5: 8,0 mm
7Z65905.A
Torque on nut: min. 0,9 Nm
(9 kg cm)
max. 1,7 Nm
(17 kg cm)
'I December 1979



BTW38
RATINGS
Limiting values in accordance with the Absolute Maximum System (lEe 134)
Anode to cathode
BTW38-600R 800R 1000R 1200R
Non-repetitive peak voltages
(t';;;;; 10 ms)
VDSMIVRSM max.
Repetitive peak voltages
VDRMIVRRM max.
Crest working voltages
V DWMIV RWM max.
Average on-state current (averaged over
any 20 ms period) up to Tmb = 85 0e
R.M.S. on-state current
Repetitive peak on-state current
Non-repetitive peak on-state current; t = 10 ms;
half sine-wave; Tj = 125 °C prior to surge;
with reapplied V RWMmax
12 t for fusing (t = 10 ms)
Rate of rise of on-state current after triggering
with IG = 250 mA to IT = 25 A; dlG/dt = 0,25 A/p.s
600 800
600 800
400 600
IT(AV)
IT(RMS)
ITRM
1000
1000
700
max.
max.
max.
max.
max.
max.
1200 V
1200 V
800 V*
10 A
16 A
75 A
150 A
112 A2 s
50 A/p.s
Gate to cathode
Average power dissipation (averaged over any 20 ms
period)
Peak power dissipation
PG(AV)
PGM
max.
max.
0,5 W
5W
Temperatures
Storage temperature
Junction temperature
Tstg -55 to +125 °C
Tj
max.
125 °e
THERMAL RESISTANCE
From junction to mounting base
From mounting base to heatsink
with heatsink compound
From junction to ambient in free air
Transient thermal impedance (t = 1 ms)
Rthj-mb
Rth mb-h
Rthj-a
Zthj-mb
1,8 °e/w
0,5 °e/w
45 0e/w
0,1 0C/W
OPERATING NOTE
The terminals should neither be bent nor twisted; they should be soldered into the circuit so that there
is no strain on them.
During soldering the heat conduction to the junction should be kept to a minimum.
< <* To ensure thermal stability: Rth j-a 4 0C/W (d.c. blocking) or 8 °C/W (a.c.). For smaller heat-
sinks Tj max should be derated. For a.c. see Fig. 3.
19781 (2 April







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