2SC3927. C3927 Datasheet

C3927 Datasheet PDF, Equivalent


Part Number

C3927

Description

2SC3927

Manufacture

Sanken electric

Total Page 1 Pages
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C3927 Datasheet
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2SC3927
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
2SC3927
Unit
VCBO 900 V
VCEO 550 V
VEBO
IC
IB
PC
Tj
Tstg
7
10(Pulse15)
5
120(Tc=25°C)
150
–55 to +150
V
A
A
W
°C
°C
sElectrical Characteristics
Symbol
Conditions
ICBO
VCB=800V
IEBO
VEB=7V
V(BR)CEO
IC=10mA
hFE VCE=4V, IC=5A
VCE(sat)
IC=5A, IB=1A
VBE(sat)
IC=5A, IB=1A
fT VCE=12V, IE=–1A
COB VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) () (A) (V) (V) (A)
250 50
5
10 –5 0.75
IB2
(A)
–1.5
ton
(µs)
1max
(Ta=25°C)
2SC3927 Unit
100max
100max
550min
µA
µA
V
10 to 28
0.5max
V
1.2max
V
6typ MHz
105typ
pF
tstg
(µs)
5max
tf
(µs)
0.5max
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
10
1.2A
8
1A
800mA
600mA
6 400mA
4 200mA
IB=100mA
2
0
0 1 2 34
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
1
–55˚C (Case Temp)
25˚C (Case Temp)
125˚C (Case Temp)
VBE(sat)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
10
8
6
4
0
0.02
VCE(sat)
125˚C
–55˚C
0.05 0.1
0.5 1
Collector Current IC(A)
5 10
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
50
125˚C
(VCE=4V)
25˚C
–55˚C
10
5
0.02
0.05 0.1
0.5 1
Collector Current IC(A)
5 10
t on• t stg• t f– I C Characteristics (Typical)
10
5
VCC 250V
IC:IB1:–IB2=10:1.5:3
tstg
1
0.5
ton
θ j-a– t Characteristics
2
1
0.5
0.1
0.2
tf
0.5 1
Collector Current IC(A)
5
0.1
10 1
10 100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
20
10
DC
10ms
1ms
100µs
5
Reverse Bias Safe Operating Area
20
10
5
Pc–Ta Derating
120
100
11
0.5 0.5
0.1
0.05
0.02
10
82
Without Heatsink
Natural Cooling
50 100
Collector-Emitter Voltage VCE(V)
500 600
0.1
0.05
0.02
50
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
100 500
Collector-Emitter Voltage VCE(V)
1000
50
3.5 Without Heatsink
0
0 25 50 75 100 125
Ambient Temperature Ta(˚C)
150


Features Datasheet pdf www.DataSheet4U.com 2SC3927 Silicon NPN Triple Diffused Planar Transistor (Hig h Voltage Switchihg Transistor) sAbsolu te maximum ratings (Ta=25°C) Symbol VC BO VCEO VEBO IC IB PC Tj Tstg 2SC3927 9 00 550 7 10(Pulse15) 5 120(Tc=25°C) 15 0 –55 to +150 Unit V V V A A W °C ° C Application : Switching Regulator an d General Purpose (Ta=25°C) 2SC3927 10 0max 100max 550min 10 to 28 0.5max 1.2m ax 6typ 105typ V V MHz pF 20.0min 4.0ma x 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45 ±0.1 0.65 +0.2 -0.1 1.4 sElectrical C haracteristics Symbol ICBO IEBO V(BR)CE O hFE VCE(sat) VBE(sat) fT COB Conditio ns VCB=800V VEB=7V IC=10mA VCE=4V, IC=5 A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE =–1A VCB=10V, f=1MHz External Dimens ions MT-100(TO3P) 5.0±0.2 15.6±0.4 9. 6 2.0 1.8 4.8±0.2 2.0±0.1 Unit µA µA 19.9±0.3 V 4.0 a b ø3.2±0.1 2 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL (Ω) 5 0 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB 1 (A) 0.75 IB2 (A) –1.5 ton (µs) 1max tstg (µs) 5max tf (µs) 0.5max Weight : Approx 6..
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