STP3NB80FP. P3NB80FP Datasheet

P3NB80FP STP3NB80FP. Datasheet pdf. Equivalent

P3NB80FP Datasheet
Recommendation P3NB80FP Datasheet
Part P3NB80FP
Description STP3NB80FP
Feature P3NB80FP; m o .c U 4 STP3NB80 t e STP3NB80FP e h S N - CHANNEL 800V - 4.6Ω - 2.6A - TO-220/TO-220FP a t PowerM.
Manufacture ST Microelectronics
Datasheet
Download P3NB80FP Datasheet




ST Microelectronics P3NB80FP
U.comwww.DataSheet4U.com
eet4®
STP3NB80
STP3NB80FP
ShN - CHANNEL 800V - 4.6- 2.6A - TO-220/TO-220FP
ata PowerMESHMOSFET
w.DTYPE
w STP3NB80
w STP3NB80FP
VDSS
800 V
800 V
RDS(on)
< 6.5
< 6.5
ID
2.6 A
2.6 A
s TYPICAL RDS(on) = 4.6
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
ms VERY LOW INTRINSIC CAPACITANCES
os GATE CHARGE MINIMIZED
.cDESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
Uadvanced family of power MOSFETs with
t4outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
elowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
eand switching characteristics.
hAPPLICATIONS
Ss HIGH CURRENT, HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY(UPS)
tas DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
aENVIRONMENT
.DABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
wVDS
wVDGR
VGS
wID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
STP3NB80 STP3NB80FP
800
800
± 30
2.6 2.6 (••)
Unit
V
V
V
A
ID Drain Current (continuous) at Tc = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
(••) Limited only by maximum temperature allowed
January 1999
1.6 1.6 (••)
m10.4
10.4
.co90 35
0.72
0.28
t4U4.5
e2000
e-65 to 150
h150
S(1) ISD 2.6 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMA
A
A
W
W/oC
V/ns
V
oC
oC
www.Data 1/9



ST Microelectronics P3NB80FP
STP3NB80/FP
www.DataSheet4U.com
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1.39
TO220-FP
3.57
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
2.6
176
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
800
Typ.
Max.
Unit
V
1
50
± 100
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 1.3 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
3
Typ.
4
Max.
5
Unit
V
4.6 6.5
2.6 A
DYNAMIC
Symbol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1.3 A
Min.
1
Typ.
2
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
440 575
60 78
79
pF
pF
pF
2/9



ST Microelectronics P3NB80FP
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 400 V ID = 1.3 A
RG = 4.7
VGS = 10 V
Qg Total Gate Charge
VDD =640 V ID = 3 A VGS = 10 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 640 V ID =3 A
RG = 4.7 VGS = 10 V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 2.6 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 2.6 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
IRRM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
STP3NB80/FP
Min.
Typ.
12
10
Max.
17
14
Unit
ns
ns
17 24 nC
6.5 nC
7.5 nC
Min.
Typ.
15
17
22
Max.
21
24
31
Unit
ns
ns
ns
Min.
Typ.
Max.
2.6
10.4
Unit
A
A
1.6
650
2.8
8.5
V
ns
µC
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
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