| DatasheetsPDF.com |
P3NB80FP Datasheet, Equivalent, STP3NB80FP.STP3NB80FP STP3NB80FP |
| Part | P3NB80FP |
|---|---|
| Description | STP3NB80FP |
| Feature | m o .c U 4 STP3NB80 t e STP3NB80FP e h S N - CHANNEL 800V - 4.6Ω - 2.6A - TO-220/TO-220FP a t PowerMESH™ MOSFET a .D w w w www.DataSheet4U.com ® TYPE V DSS R DS(on) ID STP3NB80 STP3NB80FP 800 V 800 V < 6.5 Ω < 6.5 Ω 2.6 A 2.6 A s s s s s TYPICAL RDS(on) = 4.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the C. |
| Manufacture | ST Microelectronics |
| Datasheet |
| Part | P3NB80FP |
|---|---|
| Description | STP3NB80FP |
| Feature | m o .c U 4 STP3NB80 t e STP3NB80FP e h S N - CHANNEL 800V - 4.6Ω - 2.6A - TO-220/TO-220FP a t PowerMESH™ MOSFET a .D w w w www.DataSheet4U.com ® TYPE V DSS R DS(on) ID STP3NB80 STP3NB80FP 800 V 800 V < 6.5 Ω < 6.5 Ω 2.6 A 2.6 A s s s s s TYPICAL RDS(on) = 4.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the C. |
| Manufacture | ST Microelectronics |
| Datasheet |
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |