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Full Wave. 8GBU Datasheet

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Full Wave. 8GBU Datasheet
















8GBU Wave. Datasheet pdf. Equivalent













Part

8GBU

Description

8.0 Amps Single Phase Full Wave



Feature


www.DataSheet4U.com Bulletin I2719 rev. F 11/02 8GBU Series 8.0 Amps Single P hase Full Wave Features Diode chips are glass passivated Suitable for Universa l hole mounting Easy to assemble & inst all on P.C.B. High Surge Current Capabi lity High Isolation between terminals a nd molded case (1500 VRMS) Lead free te rminals solderable as per MIL-STD-750 M ethod 2026 Termina.
Manufacture

International Rectifier

Datasheet
Download 8GBU Datasheet


International Rectifier 8GBU

8GBU; ls suitable for high temperature solderi ng at 260°C for 8-10 secs UL E160375 a pproved Bridge Rectifier IO(AV) = 8A VRRM = 50/ 1200V Description DataShee t4U.com These GBU Series of Single Phas e Bridges consist of four glass passiva ted silicon junction connected as a Ful l Wave Bridge. These four junctions are encapsulated by plastic molding techni que. These Bridges .


International Rectifier 8GBU

are mainly used in Switch Mode power sup ply and in industrial and consumer equi pment. DataShe e Major Ratings and C haracteristics Parameters IO @ TC IFSM @ 50Hz @ 60Hz I t 2 8GBU 8 100 200 210 200 184 50 to 1200 - 55 to 150 Units A °C A A A2s A2s V o @ 50Hz @ 60Hz 8GBU VRRM TJ range C www.irf.com 1 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com.


International Rectifier 8GBU

8GBU Series Bulletin I2719 rev. F 11/0 2 ELECTRICAL SPECIFICATIONS Voltage Ra tings Type number Voltage VRRM, max rep etitive VRSM, max non-repetitive VRMS , max RMS IRRM max. IRRM max. Code peak rev. voltage peak rev. voltage voltage @ rated VRRM @ rated VRRM TJ = TJ max. TJ = TJ max. TJ = TJ max. TJ = 25°C TJ = 150°C V V V V µA µA 005 01 02 04 06 08 10 12 50 100 200.





Part

8GBU

Description

8.0 Amps Single Phase Full Wave



Feature


www.DataSheet4U.com Bulletin I2719 rev. F 11/02 8GBU Series 8.0 Amps Single P hase Full Wave Features Diode chips are glass passivated Suitable for Universa l hole mounting Easy to assemble & inst all on P.C.B. High Surge Current Capabi lity High Isolation between terminals a nd molded case (1500 VRMS) Lead free te rminals solderable as per MIL-STD-750 M ethod 2026 Termina.
Manufacture

International Rectifier

Datasheet
Download 8GBU Datasheet




 8GBU
www.DataSheet4U.com
Bulletin I2719 rev. F 11/02
8.0 Amps Single Phase Full Wave
8GBU Series
Bridge Rectifier
Features
Diode chips are glass passivated
Suitable for Universal hole mounting
Easy to assemble & install on P.C.B.
High Surge Current Capability
High Isolation between terminals and molded case (1500 VRMS)
Lead free terminals solderable as per MIL-STD-750 Method 2026
Terminals suitable for high temperature soldering at 260°C for 8-10 secs
UL E160375 approved
IO(AV) = 8A
VRRM = 50/ 1200V
Description
These GBU Series of Single Phase BridgeDsactoanSsihsteet4U.com
of four glass passivated silicon junction connected
as a Full Wave Bridge. These four junctions are
encapsulated by plastic molding technique. These
Bridges are mainly used in Switch Mode power
supply and in industrial and consumer equipment.
Major Ratings and Characteristics
Parameters
8GBU
Units
IO
@ TC
IFSM @50Hz
@ 60Hz
I2t @ 50Hz
@ 60Hz
VRRM range
TJ
8
100
200
210
200
184
50 to 1200
- 55 to 150
A
°C
A
A
A2s
A2s
V
oC
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8GBU
1
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DataShee




 8GBU
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et4U.com
8GBU Series
Bulletin I2719 rev. F 11/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VRRM, max repetitive
Type number Code peak rev. voltage
TJ = TJ max.
VV
VRSM, max non-repetitive VRMS , max RMS IRRM max. IRRM max.
peak rev. voltage
voltage
@ rated V
RRM
@ rated VRRM
TJ = TJ max.
TJ = TJ max. TJ = 25°C TJ = 150°C
V V µA µA
8GBU
005
01
02
04
06
08
10
12
50
100
200
400
600
800
1000
1200
80
150
300
500
725
900
1100
1300
35 5 400
70 5 400
140 5 400
280 5 400
420 5 400
560 5 400
700 5 400
850 5 400
Forward Conduction
Parameters
8GBU
Unit
IO
IFSM
I2t
VFM
IRM
VRRM
Maximum DC output current
8.0 A
6.4
Maximum peak, one-cycle
200
non-repetitive surge current,
following any rated load condition
210
and with rated VRRM reapplied DataSheet4U.com
Maximum I2t for fusing,
200 A2s
initial TJ = TJ max
184
Maximum peak forward voltage 1.0 V
per diode
Typical peak reverse leakage
curren t per diode
5.0 µA
400
Maximum repetitive peak
50 to 1200
V
reverse voltage range
Conditions
TC = 100°C, Resistive & inductive load
TC = 100°C, Capacitive load
t = 10ms
t = 8.3ms
TJ = 150°C
t = 10ms
t = 8.3ms
TJ = 25 oC, IFM = 8A
TJ = 25 oC, 100% VRRM
TJ = 150 oC, 100% VRRM
Thermal and Mechanical Specifications
Parameters
8GBU
Unit Conditions
TJ
Tstg
RthJC
RthJA
W
T
Operating and storage
temperature range
Max. thermal resistance
junction to case
Thermal resistance,
junction to ambient
Approximate weight
Mounting Torque
-55 to 150
2.2
21
4 (0.14)
1.0
9.0
oC
°C/ W DC rated current through bridge (1)
°C/ W DC rated current through bridge (1)
g (oz)
Nm
Lb.in
Bridge to Heatsink
Note (1): Bridge mounted on Aluminun heat sink of dim 82x82x3.0mm, use silicon thermal compound heat
transfer and bolt down using 3mm screw
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DataShee




 8GBU
www.DataSheet4U.com
8GBU Series
Bulletin I2719 rev. F 11/02
Ordering Information Table
Device Code
8 GBU 12
1 23
1-
2-
3-
Bridge current
Basic Part Number
Voltage Code: code x 100 = VRRM
Outline Table
et4U.com
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DataShee
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All dimensions are in millimeters
3




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