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Silicon Transistor. B817C Datasheet

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Silicon Transistor. B817C Datasheet
















B817C Transistor. Datasheet pdf. Equivalent













Part

B817C

Description

PNP Epitaxial Planar Silicon Transistor



Feature


www.DataSheet4U.com Ordering number : EN A0188 2SB817C / 2SD1047C www.DataShee t4U.com 2SB817C / 2SD1047C Features • • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 140V / 12A, AF 80W Output Applications Large current capa citance. Wide ASO and high durability a gainst breakdown. Adoption of MBIT proc ess. Specifications ( ).
Manufacture

Sanyo Electric

Datasheet
Download B817C Datasheet


Sanyo Electric B817C

B817C; : 2SB817C Absolute Maximum Ratings at T a=25°C Parameter Collector-to-Base Vol tage Collector-to-Emitter Voltage Emitt er-to-Base Voltage Collector Current Co llector Current (Pulse) Collector Dissi pation Junction Temperature Storage Tem perature Symbol VCBO VCEO VEBO IC ICP P C Tj Tstg Tc=25°C Conditions Ratings ( --)160 (--)140 (--)6 (--)12 (--)20 2.5 120 150 --55 to +150.


Sanyo Electric B817C

Unit V V V A A W W °C °C DataSheet4U .com DataSh ee Electrical Characteri stics at Ta=25°C Parameter Collector C utoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Ou tput Capacitance Base-to-Emitterr Volta ge Collector-to-Emitter Saturation Volt age Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Brea.


Sanyo Electric B817C

kdown Voltage Symbol ICBO IEBO hFE1 hFE2 fT Cob VBE VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Conditions VCB=(--)160V, IE=0A VEB=(--)4V, IC=0A VCE=(--)5V, IC=(--)1 A VCE=(--)5V, IC=(--)5A VCE=(--)5V, IC= (--)1A VCB=(--)10V, f=1MHz VCE=(--)5V, IC=(--)5A IC=(--)5A, IB=(--)0.5A IC=(-- )5mA, IE=0A IC=(--)50mA, RBE=∞ IE=(-- )5mA, IC=0A (--)160 (--)140 (--)6 Ratin gs min typ max (--)0.





Part

B817C

Description

PNP Epitaxial Planar Silicon Transistor



Feature


www.DataSheet4U.com Ordering number : EN A0188 2SB817C / 2SD1047C www.DataShee t4U.com 2SB817C / 2SD1047C Features • • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 140V / 12A, AF 80W Output Applications Large current capa citance. Wide ASO and high durability a gainst breakdown. Adoption of MBIT proc ess. Specifications ( ).
Manufacture

Sanyo Electric

Datasheet
Download B817C Datasheet




 B817C
www.DataSheet4U.com
Ordering number : ENA0188
www.DataSheet4U.com
2SB817C / 2SD1047C
2SB817C / 2SD1047C
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
140V / 12A, AF 80W Output Applications
Features
Large current capacitance.
Wide ASO and high durability against breakdown.
Adoption of MBIT process.
Specifications ( ) : 2SB817C
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Tc=25°C
DataSheet4U.com
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Base-to-Emitterr Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VBE
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=(--)160V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(--)1A
VCE=(--)5V, IC=(--)5A
VCE=(--)5V, IC=(--)1A
VCB=(--)10V, f=1MHz
VCE=(--)5V, IC=(--)5A
IC=(--)5A, IB=(--)0.5A
IC=(--)5mA, IE=0A
IC=(--)50mA, RBE=
IE=(--)5mA, IC=0A
Ratings
(--)160
(--)140
(--)6
(--)12
(--)20
2.5
120
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
DataShee
min
100
35
(--)160
(--)140
(--)6
Ratings
typ
max
(--)0.1
(--)0.1
200
Unit
mA
mA
(10)15
MHz
(280)140
pF
1.5 V
(--0.3)0.2
(--)2.0
V
V
V
V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
DataSheet4U.com
DataSheet4 U .com
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13106DA MS IM TB-00001810 No. A0188-1/4




 B817C
www.DataSheet4U.com
Continued from preceding page.
Parameter
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Turn-On Time
Storage Time
Fall Time
2SB817C / 2SD1047C
Symbol
ton
tstg
tf
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min typ max
(0.45)0.56
(1.75)3.3
(0.25)0.4
Unit
µs
µs
µs
Package Dimensions
unit : mm
7503-003
15.6
14.0 3.2
4.8
2.0
1.6
2.0
1.0
1 23
0.6
5.45 5.45
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
OUTPUT
INPUT VR
50
RB
+
100µF
RL=
10
+
470µF
VBE= --2V
VCC=50V
IC=10IB1= --10IB2=5A
For PNP, the polarity is reversed.
et4U.com
--16
2SB817C
--14
--12
--10
IC -- VCE
DataSheet4U.com
--500mA
--400mA
--300mA
20
2SD1047C
18
16
14
12
IC -- VCE
500mA
400mA
300mA
200mA
--8
--200mA
10
--6 --100mA
--4
--40mA
--2 --20mA
0 IB=0mA
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
8 100mA
6
4 40mA
20mA
2
0 IB=0mA
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
--8
2SB817C
--7 VCE= --5V
IT03410
Collector-to-Emitter Voltage, VCE -- V IT03411
IC -- VBE
8
2SD1047C
7 VCE=5V
DataShee
--6 6
--5 5
--4 4
--3 3
--2 2
--1
0
DataSheet4U.com 0
--0.5 --1.0
Base-to-Emitter Voltage, VBE -- V
--1.5
IT03412
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V IT03413
No. A0188-2/4
DataSheet4 U .com




 B817C
www.DataSheet4U.com
3
www.Data2Sheet4U.com
100
7
5
3
2
hFE -- IC
Ta=120°C
25°C
--40°C
2SB817C / 2SD1047C
2SB817C
VCE= --5V
3
2
100
7
5
3
2
hFE -- IC
Ta=120°C
25°C
--40°C
2SD1047C
VCE=5V
et4U.com
10
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2
2
2SB817C
Collector Current, IC -- A
VCE(sat) -- IC
--1.0 IC / IB=10
7
5
3
5 7 --10
IT03414
10
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2
Collector Current, IC -- A
VCE(sat) -- IC
1.0
2SD1047C
7 IC / IB=10
5
3
5 7 10
IT03415
3
32
2
--0.1
7
5
3
Ta=120--°4C0°C
2 25°C
0.1
7
5
3
--40°C
2
Ta=120°C
25°C
--0.01
--0.01 2 3
5
3 ICP=20A
2
10
7
IC=12A
5
3
2
0.01
5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10
0.01
Collector Current, IC -- A
ASO
DITa0t3a41S6 heet4U.com
3.0
2SB817C / 2SD1047C
PC =1201W00m1s0ms 1ms
2.5
2.0
1.0
7
5
3
2
0.1
7
5 Tc=25°C
3
2 Single pulse
0.01 (For PNP, minus sign is omitted.)
1.0
2 3 5 7 10
2 3 5 7 100
23
Collector-to-Emitter Voltage, VCE -- V IT10415
PC -- Tc
140
2SB817C / 2SD1047C
1.5
1.0
0.5
0
0
23
20
5 7 0.1 2 3 5 7 1.0 2 3
Collector Current, IC -- A
PC -- Ta
5 7 10
IT03417
2SB817C / 2SD1047C
No heat sink
40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03419
120
DataShee
100
80
60
40
20
0
DataSheet4U.com 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT10416
DataSheet4 U .com
No. A0188-3/4




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