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Double-Balanced Mixer. AMMC-3040 Datasheet

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Double-Balanced Mixer. AMMC-3040 Datasheet
















AMMC-3040 Mixer. Datasheet pdf. Equivalent













Part

AMMC-3040

Description

18-36 GHz Double-Balanced Mixer



Feature


www.DataSheet4U.com Agilent AMMC-3040 1 8-36 GHz Double-Balanced Mixer with Int egrated LO Amplifier/ Multiplier Data S heet Features • High IIP3 : +23 dBm Wide Bandwidth • RF: 18-36 GHz • LO: 18-36 GHz • IF: DC-3 GHz 2520 x 760 µm (99.2 x 29.9 mils) ± 10 µm ( 0.4 mils) 100 ± 10 µm (4 ± 0.4 mil s) 75 x 75 µm (3 ± 0.4 mils) Chip Si ze: Chip Size Tolerance: Chip Thickne.
Manufacture

Hewlett-Packard

Datasheet
Download AMMC-3040 Datasheet


Hewlett-Packard AMMC-3040

AMMC-3040; ss: Pad Dimensions: • Fundamental or Sub-Harmonic Mixing • Up or Down Conv erter • Conversion Loss: 9.5dB • P1 dB : +17 dBm • Low LO Drive Power: + 2 dBm • Usable to 42 GHz Description The AMMC- 3040 is a broadband Double- Balanced Mixer (DBM) with an integrated high- gain LO amplifier. This MMIC can be used as either an up converter or d own converter in microwave or .


Hewlett-Packard AMMC-3040

millimeter wave applications. If desired , the LO amplifier can be biased to fun ction as a frequency multiplier to enab le second harmonic mixing of the LO inp ut. The mixer section ofthe AMMC- 3040 is fabricated using a suspended metal s ystem to create a unique, broadsidecoup led balun structure (patent pending) to achieve exceptional bandwidth. The MMI C provides repeata.


Hewlett-Packard AMMC-3040

ble conversion loss without tuning, maki ng it highly suitable for automated ass embly processes. DataShee DataSheet4U .com Applications • Point-to-Point R adio • LMDS • SATCOM AMMC-3040 Abs olute Maximum Ratings[1] Symbol Paramet ers/Conditions Units V V mA °C °C °C -55 -65 +165 +300 -3.0 Min. Max. 5 0.5 550 +160 VD1, 2, 3, 4 Positive Drain Voltage VG1, 2, 3, 4 Gate V.





Part

AMMC-3040

Description

18-36 GHz Double-Balanced Mixer



Feature


www.DataSheet4U.com Agilent AMMC-3040 1 8-36 GHz Double-Balanced Mixer with Int egrated LO Amplifier/ Multiplier Data S heet Features • High IIP3 : +23 dBm Wide Bandwidth • RF: 18-36 GHz • LO: 18-36 GHz • IF: DC-3 GHz 2520 x 760 µm (99.2 x 29.9 mils) ± 10 µm ( 0.4 mils) 100 ± 10 µm (4 ± 0.4 mil s) 75 x 75 µm (3 ± 0.4 mils) Chip Si ze: Chip Size Tolerance: Chip Thickne.
Manufacture

Hewlett-Packard

Datasheet
Download AMMC-3040 Datasheet




 AMMC-3040
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Agilent AMMC-3040
18-36 GHz Double-Balanced Mixer
with Integrated LO Amplifier/
Multiplier
Data Sheet
Features
• High IIP3 : +23 dBm
• Wide Bandwidth
• RF: 18-36 GHz
• LO: 18-36 GHz
• IF: DC-3 GHz
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
2520 x 760 µm (99.2 x 29.9 mils)
± 10 µm (± 0.4 mils)
100 ± 10 µm (4 ± 0.4 mils)
75 x 75 µm (3 ± 0.4 mils)
• Fundamental or Sub-Harmonic
Mixing
• Up or Down Converter
• Conversion Loss: 9.5dB
• P1dB : +17 dBm
Description
• Low LO Drive Power: + 2 dBm
• Usable to 42 GHz
The AMMC- 3040 is a broadband
Double- Balanced Mixer (DBM)
with an integrated high- gain LO
amplifier. This MMIC can be
used as either an up converter
or down converter in microwave
or millimeter wave applications.
If desired, the LO amplifier can
be biased to function as a
frequency multiplier to enable
second harmonic mixing of the
LO input. The mixer section
ofthe AMMC- 3040 is fabricated
using a suspended metal system
to create a unique, broadside-
coupled balun structure (patent
pending) to achieve exceptional
bandwidth. The MMIC provides
repeatable conversion loss
without tuning, making it highly
suitable for automated assembly
processes.
DataSheet4U.com
Applications
• Point-to-Point Radio
• LMDS
• SATCOM
AMMC-3040 Absolute Maximum Ratings[1]
Symbol Parameters/Conditions
Units Min. Max.
VD1, 2, 3, 4 Positive Drain Voltage
V5
VG1, 2, 3, 4 Gate Voltage
V -3.0 0.5
Idd Total Drain Current
mA 550
Tch Operating Channel Temp. °C +160
Tb Operating Backside Temp.
°C -55
Tstg Storage Case Temp.
°C -65 +165
Tmax Maximum Assembly Temp (60 sec max) °C
+300
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
DataShee
Note: These devices are ESD sensitive. The following precautions are strongly recommended:
Ensure that an ESD approved carrier is used when dice are transported from one destination to another.
Personal grounding is to be worn at all times when handling these devices.
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 AMMC-3040
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AMMC-3040 DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units Min.
Typ.
Max.
VD1, 2, 3, 4 Drain Supply Operating Voltage
V 2 3.5 5
Id1 First Stage Drain Supply Current
Vdd = 3.5 V, Vg1 = 0.5 V
mA 50
ID2, 3, 4
Total Drain Supply Current for Stages 2, 3 and 4
(Vdd = 3.5 V, Vgg = 0.5 V)
mA
225
VG1, 2, 3, 4 Gate Supply Operating Voltages (Idd = 250 mA)
V
-0.5
Vp Pinch-off Voltage (Vdd = 3.5 V, Idd < 10 mA
θch-b Thermal Resistance[2] (Backside Temp. Tb= 25°C)
V
°C/W
-1.5
49
Notes:
1. Measured in wafer form with Tchuck = 25°C. (Except θch-bs.)
2. Channel-to-backside Thermal Resistance (θch-b)=58°C/at Tchannel (Tc)=150 °C as measured using the liquid crystal method. Thermal Resistance
at backside temperature (Tb)=25 °C calculated from measured data.
AMMC-3040 RF Specifications
Zo=50 , Tb = 25°C, IF Output = 2 GHz, LO Input Power = +2 dBm, RF Input Power = -20 dBm, except as noted.
et4U.com
Symbol
Lc
Lc
ISOL L-R
P1 dB
IIP3
Parameters and Test Conditions
Units
DataSheet4U.com
Conversion Loss, Down Conversion [1]
dB
Conversion Loss, Up Conversion [2]
dB
LO - RF Isolation at RF Frequency = 22 GHz [3]
dB
Input Power at 1 dB Conversion Loss
Compression, Down Conversion
Input 3rd Order Intercept Point,
Down Conversion at RF Frequency = 22 GHz [4]
dBm
dBm
Notes:
1. 100% on-wafer RF testing is done at RF frequency = 18, 22, and 32 GHz.
2. IF Input = 2 GHz, IF Input Power = -20 dBm, RF freq = LO + IF
3. Does not include LO amplifier gain of ~20 dB.
4. f = 2 MHz, RF Input Power = -5 dBm.
V dd =3.5 V,
I dd =250 mA
Typ. Max.
9.5 12
10
31
17
V dd =4.5 V,
I dd =150 mA
Typ.
10
10.5
32
17
23 22
DataShee
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2




 AMMC-3040
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AMMC-3040 Typical Performance
Zo=50 , Tb = 25°C, IF = 2 GHz, LO Input Power = +2 dBm, RF Input Power = -20 dBm, except as noted.
14 14
12 13 LO = -4 dBm
LO = 0 dBm
10 LO = 4 dBm
12
8
11
6
LO = - 4 dBm
10
4 LO = 0 dBm
LO = 4 dBm
29
14
LO = 0 dBm
13 LO = 2 dBm
LO = 4 dBm
12
11
10
9
0
20 22 24 26 28 30 32 34 36 38 40 42
RF FREQUENCY (GHz)
8
20 22 24 26 28 30 32 34 36 38 40 42
RF FREQUENCY (GHz)
8
18 20 22 24 26 28 30 32 34
RF FREQUENCY (GHz)
Figure 1. Conversion Loss, UpConversion.
Vd = 3.5 V, Id = 250 mA, LO freq = RF - IF.
Figure 2. Conversion Loss, Down Conversion.
Vd = 3.5 V, Id = 250 mA, LO freq = RF - IF.
Figure 3. Conversion Loss, Up Conversion.
Vd = 4.5 V, Id = 150 mA, LO freq = RF + IF.
et4U.com
14
LO = 0 dBm
13 LO = 2 dBm
LO = 4 dBm
12
12
23 GHz
11 35 GHz
10
12
11
10
11 9 9
10 8 8 23 GHz
35 GHz
9
7 DataSheet4U.com
7
8
18 20 22 24 26 28 30 32 34
RF FREQUENCY (GHz)
6
-4 -3 -2 -1 0 1 2 3 4 5 6
RF FREQUENCY (GHz)
6
-4 -3 -2 -1 0 1 2 3 4 5 6
LO INPUT POWER (dBm)
Figure 4. Conversion Loss, Down Conversion.
Vd = 4.5 V, Id = 150 mA, LO freq = RF + IF.
Figure 5. Conversion Loss Vs. LO Input Power, Up Figure 6. Conversion Loss Vs. LO Input Power,
Conversion. Vd = 3.5 V, Id = 250 mA, LO freq = RF Down Conversion. Vd = 3.5 V, Id = 250 mA, LO
- IF. freq = RF - IF.
20 25 25
18 20 20
16 15 15
14
LO = - 2 dBm
LO = 0 dBm
12 LO = 2 dBm
LO = 4 dBm
10
18 20 22 24 26 28 30 32 34 36 38 40
RF FREQUENCY (GHz)
Figure 7. Input Power at 1 dB Conversion Loss
Compression, Down Conversion.
Vd = 3.5 V, Id = 250 mA, LO freq = RF + IF.
10 10
LO = 0 dBm
LO = 2 dBm
5 5 LO = 4 dBm
0
18 20 22 24 26 28 30 32 34 36 38 40
RF FREQUENCY (GHz)
0
18 20 22 24 26 28 30 32 34
RF FREQUENCY (GHz)
Figure 8. Input Power at 1 dB Conversion Loss
Compression, Up Conversion.
Vd = 3.5 V, Id = 250 mA, LO freq = RF + IF.
Figure 9. Input Power at 1 dB Conversion Loss
Compression, Down Conversion.
Vd = 4.5 V, Id = 150 mA, LO freq = RF + IF.
DataShee
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