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FDS2672 N-Channel UltraFET Trench® MOSFET
August 2006
FDS2672 N-Channel UltraFET Trench® MOSFET
200V, 3.9A, 70mΩ
Features
Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A Fast switching speed High performance trench technology for extremely low rDS(on) RoHS compliant
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General Descriptio...
