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STB10NA40
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STB10NA40
n n n n n n n n
V DSS 400 V
R DS(on ) < 0.55 Ω
ID 10 A
n
TYPICAL RDS(on) = 0.46 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPRE...