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2SK2596

Renesas Technology
Part Number 2SK2596
Manufacturer Renesas Technology
Description Silicon N-Channel MOSFET
Published Oct 18, 2006
Detailed Description www.DataSheet4U.com 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0300 (Previous ADE-208-1367(Z)) Re...
Datasheet PDF File 2SK2596 PDF File

2SK2596
2SK2596

Overview
www.
DataSheet4U.
com 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0300 (Previous ADE-208-1367(Z)) Rev.
3.
00 Feb.
14.
2005 Features • High power output, High gain, High efficiency PG = 12.
2 dB, Pout = 30.
2 dBm, ηD = 45%min.
(f = 836.
5 MHz) • Compact package capable of surface mounting Outline PLZZ0004CA-A (Previous code : UPAK) D 2 3 G 1 1.
 Gate 2.
 Source 3.
 Drain 4.
 Source 4 S Note: Marking is “BX“.
This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage tempe...


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