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2SK2595
Silicon N-Channel MOS FET UHF Power Amplifier
REJ03G0206-0300 Rev.3.00 Aug.26.2004
Features
High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5.37 W, ηD = 50% min. (f = 836.5 MHz) Compact package capable of surface mounting
Outline
RP8P D G 1
3 2 S
1. Gate 2. Source 3. Drain
Note:
Marking is "AX".
This ...
