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SW730

Part Number	SW730
Manufacturer	SAMWIN
Description	N-Channel MOSFET
Published	Oct 18, 2006
Detailed Description	www.DataSheet4U.com SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typic...
Datasheet	SW730 PDF File

Overview

www.
DataSheet4U.
com SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 400 V : 1.
0 ohm : 6.
0 A : 32 nc : 73 W SW730 This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
D G S Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG,TJ TL Drain to Source V...

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