Schottky Diode. FDFMA3N109 Datasheet

FDFMA3N109 Datasheet PDF, Equivalent


Part Number

FDFMA3N109

Description

Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
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FDFMA3N109 Datasheet
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May 2006
FDFMA3N109
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
General Description
This device is designed specifically as a single package
solution for a boost topology in cellular handset and
other ultra-portable applications. It features a MOSFET
with low input capacitance, total gate charge and on-
state resistance, and an independently connected
schottky diode with low forward voltage and reverse
leakage current to maximize boost efficiency.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
switching and linear mode applications.
PIN 1
A NC D
KD
Features
MOSFET:
2.9 A, 30 V RDS(ON) = 123 m@ VGS = 4.5 V
RDS(ON) = 140 m@ VGS = 3.0 V
RDS(ON) = 163 m@ VGS = 2.5 V
Schottky:
VF < 0.46 V @ 500mA
Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
RoHS Compliant
A1
NC 2
6K
5G
KGS
MicroFET 2x2
D3
4S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
VRRM
IO
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (TC = 25°C, VGS = 4.5V)
– Continuous (TC = 25°C, VGS = 2.5V)
– Pulsed
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Temperature
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)
(Note 1b)
Ratings
30
±12
2.9
2.7
10
1.5
0.65
–55 to +150
28
1
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
83
193
101
228
Package Marking and Ordering Information
Device Marking
Device
Reel Size
109
FDFMA3N109
7’’
Tape width
8mm
Units
V
V
A
W
°C
V
A
°C/W
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDFMA3N109 Rev B(W)
DataSheet4 U .com

FDFMA3N109 Datasheet
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage Current
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ± 12 V, VDS = 0 V
On Characteristics
VGS(th)
VGS(th)
TJ
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 4.5V, ID = 2.9A
VGS = 3.0V, ID = 2.7A
VGS = 2.5V, ID = 2.5A
VGS = 4.5V, ID = 2.9A, TC = 85°C
VGS = 3.0V, ID = 2.7A, TC = 150°C
VGS = 2.5V, ID = 2.5A, TC = 150°C
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
V GS = 0 V, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 15 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
VDS = 15 V,
VGS = 4.5 V
ID = 2.9 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
IS = 2.0 A
Voltage
IS = 1.1 A
trr
Diode Reverse Recovery Time
IF = 2.9 A,
Qrr Diode Reverse Recovery Charge dIF/dt = 100 A/µs
Schottky Diode Characteristics
IR Reverse Leakage
VF Forward Voltage
VF Forward Voltage
VR = 28 V
IF = 1 A
IF = 500 mA
TJ = 25°C
TJ = 85°C
TJ = 25°C
TJ = 85°C
TJ = 25°C
TJ = 85°C
Min Typ Max Units
30 V
25 mV/°C
1 µA
±10 µA
0.4 1.0 1.5
V
–3 mV/°C
75 123
84 140
92 163
95 166
138 203
150 268
m
190 220
30 40
20 30
4.6
pF
pF
pF
6
8
12
2
2.4
0.35
0.75
12
16
21
4
3.0
ns
ns
ns
ns
nC
nC
nC
2.9
0.9 1.2
0.8 1.2
10
2
A
V
ns
nC
10 100
0.07 4.7
0.50 0.57
0.49 0.60
0.40 0.46
0.36 0.43
µA
mA
V
V
DataSheet4 U .com
FDFMA3N109 Rev B(W)


Features Datasheet pdf www.DataSheet4U.com FDFMA3N109 Integrat ed N-Channel PowerTrench® MOSFET and S chottky Diode May 2006 FDFMA3N109 Int egrated N-Channel PowerTrench® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It feature s a MOSFET with low input capacitance, total gate charge and onstate resistanc e, and an independently connected schot tky diode with low forward voltage and reverse leakage current to maximize boo st efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suit ed to switching and linear mode applica tions. PIN 1 A NC D A K D NC K G S D Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm • Ro HS Compliant Schottky: • VF < 0.46 V @ 500mA Features MOSFET: • 2.9 A, 30 V RDS(ON) = 123 mΩ @ VGS = 4.5 V RDS (ON) = 140 mΩ @ VGS = 3.0 V RDS(ON) = 163 mΩ @ VGS = 2.5 V 1 2 3 6 K 5 G 4 S .
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