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2N3966

Junction(2N3xxx) -Gate Field-Effect Transistor

Description

www.DataSheet4U.com BV GSS VP Max. (V) 5.0 2.0 6.0 3.0 6.0 6.0 6.0 5.0 6.0 @ VD S (V) 20 20 15 10 15 15 10 20 10 & ID Min. (nA) 1.0 1.0 0.5 1.0 1.0 1.0 10.0 1.0 1.0 (mmho) 2.00 1.00 3.00 0.08 2.50 - Gfs Max. (mmho) 3.00 2.00 6.50 0.25 - Part No. Min. (V) Min. (V) 2.0 0.6 1.0 2.5 2.5 4.0 2.0 1.0 Ciss Max. (pF) 4 4 6 3 4 4 6 5 5 Crss Max. (pF) 1.2 1...

Taitron Components

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