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TIM6472-35SL

Toshiba Semiconductor
Part Number TIM6472-35SL
Manufacturer Toshiba Semiconductor
Description MICROWAVE POWER GaAs FET
Published Nov 6, 2006
Detailed Description FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN G1dB= 8.0dB at 6.4G...
Datasheet PDF File TIM6472-35SL PDF File

TIM6472-35SL
TIM6472-35SL

Overview
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.
5dBm at 6.
4GHz to 7.
2GHz ･HIGH GAIN G1dB= 8.
0dB at 6.
4GHz to 7.
2GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.
0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM6472-35SL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 8.
0A f = 6.
4 to 7.
2GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 35.
0dBm, f= 5MHz (Singl...


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