Schottky Diode. CSD02060 Datasheet

CSD02060 Diode. Datasheet pdf. Equivalent

CSD02060 Datasheet
Recommendation CSD02060 Datasheet
Part CSD02060
Description Silicon Carbide Schottky Diode
Feature CSD02060; www.DataSheet4U.com CSD02060–Silicon Carbide Schottky Diode Zero Recovery® Rectifier Features • • .
Manufacture CREE
Datasheet
Download CSD02060 Datasheet




CREE CSD02060
www.DataSheet4U.com
CSD02060–Silicon Carbide Schottky Diode
Zero Recovery® Rectifier
Features
Package
VRRM = 600V
IF(AVG) = 2A
Qc = 7nC
600-Volt Schottky Rectifier
Zero Reverse Recovery
Zero Forward Recovery
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Swtitching
Positive Temperature Coefficient on VF
Benefits
TO-263-2
TO-220-2
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies
Power Factor Correction
- Typical PFC
Motor Drives
Pout
:
200W-400W
- Typical Power : 0.50HP-1.0HP
PIN 1
PIN 2
CASE
Part Number
CSD02060A
CSD02060G
Package
TO-220-2
TO-263-2
Marking
CSD02060
CSD02060
Maximum Ratings
Symbol
Parameter
Value Unit
Test Conditions
Note
VRRM
Repetitive Peak Reverse Voltage
600 V
VRSM
Surge Peak Reverse Voltage
600 V
VDC DC Blocking Voltage
IF(AVG)
Average Forward Current
IF(PEAK)
Peak Forward Current
600
2
3.5
5
V
A
TTCC==115205˚˚CC,,
DC
DC
A TC=125˚, TREP<1mS, Duty=0.5
IFRM Repetitive Peak Forward Surge Current
10 A TC=25˚C, tP=8.3ms, Half Sine Wave
IFSM
Ptot
TJ , Tstg
Non-Repetitive Peak Forward Surge Current
40 A TC=25˚C, tP=10µs, Pulse
Power Dissipation
Operating Junction and Storage Temperature
43
14
W TTCC==2152˚5C˚C
-55 to
+175
˚C
Subject to change without notice.
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CREE CSD02060
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
1.6 1.8
2.0 2.4
50 200
100 1000
V
μA
QC Total Capacitive Charge
7
nC
C Total Capacitance
120
20 pF
15
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
IIFF
=
=
2A
2A
TTJJ==2157°5C°C
VVRR
=
=
600V
600V
TTJJ==2157°5C°C
VdiR/d=t 6=005V0,0IAF /=μs1A
TJ = 25°C
VVVRRR
=
=
=
02V0,0TV,J
400V,
=
TTJJ
25°C, f = 1MHz
= 25˚C, f = 1MHz
= 25˚C, f = 1MHz
Thermal Characteristics
Symbol Parameter
RθJC
Thermal Resistance from Junction
to Case
RθJA
Thermal Resistance from Junction
to Ambient
Typ.
4.7
53
Max.
Unit
°C/W
°C/W
Test Conditions
Typical Performance
124
11
TJ = 25°C
10
TJ = 75°C
93 TJ = 125°C
TJ = 175°C
8
7
62
5
4
31
2
1
00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VF Forward Voltage (V)
200
180
160
140
120
100
80
60
40
20
0
0
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°C
200 400 600
VR Reverse Voltage (V)
Note
Note
800
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
 CSD02060 Rev. -



CREE CSD02060
Typical Performance
20
186
16
5
14
124
10
3
8
62
4
1
2
00
2255
5500
7755 110000 112255 115500
TC Case Temperature (°C)
117755
220000
Figure 3. Current Derating
125000
20800
15600
10400
5200
00
1 10 100 1000
VR Reverse Voltage (V)
Figure 4. Capacitance vs. Reverse Voltage
1.00E+01
1.00E+00
1.00E-01
1.00E-02
1.00E-03
1.00E-07
1.00E-06
1.00E-05
1.00E-04 1.00E-03
time [s]
1.00E-02
1.00E-01 1.00E+00
Figure 5. Transient Thermal Impedance
 CSD02060 Rev. -







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