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TPCF8B01

Part Number	TPCF8B01
Manufacturer	Toshiba Semiconductor
Description	Silicon P-Channel MOSFET
Published	Nov 21, 2006
Detailed Description	TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8B01 Notebook PC...
Datasheet	TPCF8B01 PDF File

Overview

TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 4.
7 S (typ.
) • Low leakage current: IDSS =-10 μA (max) (VDS = -20 V) • Enhancement-model: Vth = -0.
5 to-1.
2 V (VDS =-10 V, ID = -200 μA) • Low forward voltage: VFM(2) = 0.
46 V (typ.
) Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Single pulse avalanche energy (No...

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TPCF8B01 Silicon P-Channel MOSFET - Toshiba Semiconductor

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