N-Channel JFET. 2N6550 Datasheet

2N6550 JFET. Datasheet pdf. Equivalent

2N6550 Datasheet
Recommendation 2N6550 Datasheet
Part 2N6550
Description N-Channel JFET
Feature 2N6550; InterFET Product Folder Technical Support Order Now 2N6550 2N6550 N-Channel JFET Features • In.
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2N6550
2N6550 N-Channel JFET
Features
InterFET N0450L Geometry
Low Noise: 0.9 nV/√Hz Typical
High Gain: 25mS Minimum
RoHS Compliant
SMT, TH, and Bare Die Package options.
Applications
Low-Noise, High Gain Amplifiers
Description
The -20V InterFET 2N6550 is targeted for sensitive
amplifier stages for mid-frequencies designs. The
2N6550 has a cutoff voltage of less than 3.0V
ideal for low-level power supplies. The TO-46
package is hermetically sealed and suitable for
military applications.
Gate/Case
Drain 2
Source
Source 1
Drain 2
TO-46 Bottom View
3
1
SOT23 Top View
3 Gate
TO-92 Bottom View
Gate 3
Drain 2
Source 1
Product Summary
Parameters
BVGSS
IDSS
Gate to Source Breakdown Voltage
Drain to Source Saturation Current
VGS(off)
Gate to Source Cutoff Voltage
GFS
Forward Transconductance
Ordering Information Custom Part and Binning Options Available
Part Number
Description
2N6550
Through-Hole
PN6550
Through-Hole
SMP6550
Surface Mount
7“ Tape and Reel: Max 3,000 Pieces
SMP6550TR
13” Tape and Reel: Max 9,000 Pieces
2N6550COT
Chip Orientated Tray (COT Waffle Pack)
2N6550CFT
Chip Face-up Tray (CFT Waffle Pack)
2N6550 Min
Unit
-20
V
10
mA
-0.3
V
25
mS
Case
TO-46
TO-92
SOT23
SOT23
COT
CFT
Packaging
Bulk
Bulk
Bulk
Minimum 1,000 Pieces
Tape and Reel
400/Waffle Pack
400/Waffle Pack
Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and
extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and
security requirements is the responsibility of the Buyer. These resources are subject to change without notice.
IF35068.R00



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2N6550
Electrical Characteristics
Maximum Ratings (@ TA = 25°C, Unless otherwise specified)
Parameters
VRGS Reverse Gate Source and Gate Drain Voltage
IFG Continuous Forward Gate Current
PD Continuous Device Power Dissipation
P Power Derating
TJ Operating Junction Temperature
TSTG Storage Temperature
Static Characteristics (@ TA = 25°C, Unless otherwise specified)
V(BR)GSS
IGSS
VGS(OFF)
IDSS
Parameters
Gate to Source
Breakdown Voltage
Gate to Source
Reverse Current
Gate to Source
Cutoff Voltage
Drain to Source
Saturation Current
Conditions
VDS = 0V, IG = 10μA
VGS = -10V, VDS = 0V, TA = 25°C
VGS = -10V, VDS = 0V, TA = 85°C
VDS = 10V, ID = 0.1mA
VGS = 0V, VDS = 10V
(Pulsed)
Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)
Parameters
GFS
Forward
Transconductance
GOS
Output
Conductance
Ciss
Input Capacitance
Crss
Reverse Transfer
Capacitance
en
Equivalent Input
Noise Voltage
e Equivalent Total
n Total Input Noise Voltage
in
Equivalent Input
Noise Current
Conditions
VDS = 10V, ID = 10mA, f = 1kHz
VDS = 10V, ID = 10mA, f = 1kHz
VDS = 10V, ID = 10mA, f = 140kHz
VDS = 10V, f = 140kHz
VDS = 5V, ID = 10mA, f = 10Hz
VDS = 5V, ID = 10mA, f = 1kHz
VDS = 5V, ID = 10mA, f = 10kHz to 20kHz
RS < 100 kΩ, f = 1kHz
Value
-20
50
400
2.3
-55 to 125
-65 to 200
Unit
V
mA
mW
mW/°C
°C
°C
2N6550
Min
Typ
Max Unit
-20
V
-3
nA
-0.1
μA
-0.3
-3
V
10
100
250
mA
2N6550
Min
Typ
Max Unit
25
150
mS
150
μS
30
35
pF
10
20
pF
1.4
6
2
10
nV/Hz
0.4
0.6 μVrms
0.1
pA/Hz
2N6550
Document Number: IF35068.R00
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SOT23 (TO-236AB) Mechanical and Layout Data
Package Outline Data
2N6550
Suggested Pad Layout
1. All linear dimensions are in millimeters.
2. Package weight approximately 0.12 grams
3. Molded plastic case UL 94V-0 rated
4. For Tape and Reel specifications refer to
InterFET CTC-021 Tape and Reel Specification,
Document number: IF39002
5. Bulk product is shipped in standard ESD shipping
material
6. Refer to JEDEC standards for additional
information.
2N6550
Document Number: IF35068.R00
1. All linear dimensions are in millimeters.
2. The suggested land pattern dimensions have been
provided for reference only. A more robust pattern
may be desired for wave soldering.
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