2N6550 Transistor Datasheet

2N6550 Datasheet PDF, Equivalent


Part Number

2N6550

Description

N-Channel Silicon Junction Field-Effect Transistor

Manufacture

InterFET Corporation

Total Page 1 Pages
Datasheet
Download 2N6550 Datasheet


2N6550
www.DataSheet4U.com
01/99
B-27
2N6550
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA =25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuious Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Junction Temperature (Operating & Storage)
– 20 V
50 mA
400 mW
2.3 mW/°C
– 65°C to +200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
V(BR)GSS
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current (Pulsed)
Gate Source Cutoff Voltage
IDSS
VGS(OFF)
Dynamic Electrical Characteristics
Transconductance
Common Source Output Conductance
Common Source Input Capacitance
Common Source Reverse Transfer Capacitance
gfs
|Yos |
Ciss
Crss
Equivalent Short Circuit
Input Noise Voltage
N
N Total
Equivalent Open Circuit Input Noise Current ¯iN
2N6550
Min Typ Max
– 20
–3
– 0.1
10 100 250
– 0.3 – 3
Process NJ450L
Unit Test Conditions
V IG = 10 µA, VDS = ØV
nA VGS = – 10V, VDS = ØV
µA VGS = – 10V, VDS = ØV
mA VDS = 10V, VGS = Ø V
V VDS = 10V, ID = 0.1 mA
TA = 85°C
25 150 mS VDS = 10V, ID = 10 mA
150 µS VDS = 10V, ID = 10 mA
30 35 pF VDS = 10V, ID = 10 mA
10 20 pF VDS = 10V, VDS = ØV
1.4 2 nV/Hz VDS = 5V, ID = 10 mA
6 10 nV/Hz VDS = 5V, ID = 10 mA
0.4 0.6 µVrms VDS = 5V, ID = 10 mA
0.1 pA/Hz RS < 100 K
f = 1 kHz
f = 1 kHz
f = 140 kHz
f = 140 kHz
f = 1 kHz
f = 10 Hz
f = 10 kHz
to 20 kHz
f = 1 kHz
TOÐ46 Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate & Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375


Features www.DataSheet4U.com 01/99 B-27 2N6550 N-Channel Silicon Junction Field-Effe ct Transistor ¥ Low-Noise, High Gain A mplifier Absolute maximum ratings at TA =25¡C Reverse Gate Source & Reverse G ate Drain Voltage Continuious Forward G ate Current Continuous Device Power Dis sipation Power Derating Junction Temper ature (Operating & Storage) – 20 V 5 0 mA 400 mW 2.3 mW/°C – 65°C to +20 0°C At 25°C free air temperature: St atic Electrical Characteristics Gate So urce Breakdown Voltage Gate Leakage Cur rent Zero Gate Voltage Drain Current (P ulsed) 2N6550 Min V(BR)GSS IGSS IDSS V GS(OFF) 10 – 0.3 100 – 20 –3 – 0.1 250 –3 Typ Max Unit V nA µA mA V Process NJ450L Test Conditions IG = 1 0 µA, VDS = ØV VGS = – 10V, VDS = V VGS = – 10V, VDS = ØV VDS = 10V, VGS = Ø V VDS = 10V, ID = 0.1 mA TA = 85°C Gate Source Cutoff Voltage Dynam ic Electrical Characteristics Transcond uctance Common Source Output Conductanc e Common Source Input Capacitance gfs |Yos | Ciss 25 30 10 1.4 6 150 150 35 20 2 10 mS µS .
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