MHL21336N Amplifier Datasheet

MHL21336N Datasheet PDF, Equivalent


Part Number

MHL21336N

Description

RF Linear LDMOS Amplifier

Manufacture

Motorola Semiconductor

Total Page 5 Pages
Datasheet
Download MHL21336N Datasheet


MHL21336N
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Freescale Semiconductor
Technical Data
3G Band
RF Linear LDMOS Amplifier
Designed for ultra - linear amplifier applications in 50 ohm systems operating in
the 3G frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital CDMA modulation systems.
Third Order Intercept: 45 dBm Typ
Power Gain: 31 dB Typ (@ f = 2140 MHz)
Input VSWR v 1.5:1
Features
Excellent Phase Linearity and Group Delay Characteristics
Ideal for Feedforward Base Station Applications
N Suffix Indicates Lead - Free Terminations
Document Number: MHL21336N
Rev. 7, 8/2006
MHL21336N
2110 - 2170 MHz
3.0 W, 31 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 1
Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Rating
Symbol
DC Supply Voltage
RF Input Power
Storage Temperature Range
Operating Case Temperature Range
VDD
Pin
Tstg
TC
Table 2. Electrical Characteristics (VDD = 26 Vdc, TC = 25°C; 50 Ω System)
Characteristic
Symbol
Supply Current
Power Gain
Gain Flatness
Power Output @ 1 dB Compression
(f = 2140 MHz)
(f = 2110 - 2170 MHz)
(f = 2140 MHz)
IDD
Gp
GF
P1dB
Third Order Intercept (f1 = 2137 MHz, f2 = 2142 MHz)
ITO
Noise Figure
(f = 2170 MHz)
NF
Value
30
+5
- 40 to +100
- 20 to +100
Min Typ Max
— 500 525
30 31 33
— 0.15 0.4
34 35 —
44 45 —
— 4.5
5
Unit
Vdc
dBm
°C
°C
Unit
mA
dB
dB
dBm
dBm
dB
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MHL21336N
1

MHL21336N
www.DataSheet4U.com
TYPICAL CHARACTERISTICS
40
Gp VDD = 26 Vdc
30 TC = 25_C
20
10
0 ORL
−10
IRL
−20
−30
−40
1400 1600 1800 2000 2200 2400 2600
f, FREQUENCY (MHz)
Figure 1. Power Gain, Input Return Loss,
Output Return Loss versus Frequency
2800
55
VDD = 26 Vdc
50 TC = 25_C
ITO
45
40
P1dB
35
30
25
1800
1900 2000 2100 2200 2300 2400
f, FREQUENCY (MHz)
Figure 2. P1dB, ITO versus Frequency
2500
40
35
Gp
VDD = 26 Vdc
f = 2140 MHz
600
550
30 500
IDD
25 450
20 400
−40 −20 0 20 40 60 80 100 120
TEMPERATURE (_C)
Figure 3. Power Gain, IDD versus Temperature
48 38
VDD = 26 Vdc
47 f = 2140 MHz 37
46 36
ITO
45 35
P1dB
44 34
43 33
42
−40 −20 0 20 40 60 80 100
TEMPERATURE (_C)
Figure 4. ITO, P1dB versus Temperature
32
120
−1400
−1420
VDD = 26 Vdc
f = 2140 MHz
2.4
2.3
−1440
−1460
PHASE
GROUP DELAY
2.2
2.1
−1480
2
−1500
−40 −20 0 20 40 60 80 100
TEMPERATURE (_C)
Figure 5. Phase(1), Group Delay(1) versus
Temperature
1. In Production Test Fixture
1.9
120
MHL21336N
2
0.6 0.6
VDD = 26 Vdc
f = 2110 − 2170 MHz
0.5 0.5
0.4
GF
0.3
0.4
0.3
0.2
PHASE LINEARITY
0.1
0.2
0.1
0
−40 −20 0 20 40 60 80 100
TEMPERATURE (_C)
Figure 6. Gain Flatness, Phase Linearity
versus Temperature
0
120
RF Device Data
Freescale Semiconductor


Features www.DataSheet4U.com Freescale Semicondu ctor Technical Data Document Number: M HL21336N Rev. 7, 8/2006 3G Band RF Lin ear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 oh m systems operating in the 3G frequency band. A silicon FET Class A design pro vides outstanding linearity and gain. I n addition, the excellent group delay a nd phase linearity characteristics are ideal for digital CDMA modulation syste ms. • Third Order Intercept: 45 dBm T yp • Power Gain: 31 dB Typ (@ f = 214 0 MHz) • Input VSWR v 1.5:1 Features • Excellent Phase Linearity and Group Delay Characteristics • Ideal for Fe edforward Base Station Applications • N Suffix Indicates Lead - Free Termina tions MHL21336N 2110 - 2170 MHz 3.0 W , 31 dB RF LINEAR LDMOS AMPLIFIER CASE 301AP - 02, STYLE 1 Table 1. Absolute Maximum Ratings (TC = 25°C unless oth erwise noted) Rating DC Supply Voltage RF Input Power Storage Temperature Rang e Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +5 - 40 t.
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