2SD1481 TRANSISTOR Datasheet

2SD1481 Datasheet PDF, Equivalent


Part Number

2SD1481

Description

SILICON POWER TRANSISTOR

Manufacture

NEC

Total Page 4 Pages
PDF Download
Download 2SD1481 Datasheet PDF


2SD1481
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DATA SHEET
SILICON POWER TRANSISTOR
2SD1481
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
FEATURES
• On-chip C-to-B Zener diode for surge voltage absorption
• Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A)
• Ideal for use in a direct drive from IC to the devices such as OA
and FA equipment and motor solenoid relay printer head drivers
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current
IC(DC)
Collector current
IC(pulse)*
Base current
Total power dissipation
IB(DC)
PT (Tc = 25°C)
Total power dissipation
PT (Ta = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW 300 µs, duty cycle 10%
Ratings
60 ±10
60 ±10
7.0
2.0
4.0
0.2
15
1.5
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16189EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928

2SD1481
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = 40 V, IE = 0
DC current gain
hFE1 VCE = 2.0 V, IC = 1.0 A*
DC current gain
hFE2 VCE = 2.0 V, IC = 3.0 A*
Collector saturation voltage VCE(sat) IC = 1.0 A, IB = 1.0 mA*
Base saturation voltage
VBE(sat) IC = 1.0 A, IB = 1.0 mA*
Turn-on time
Storage time
Fall time
ton IC = 1.0 A, IB1 = IB2 = 10 mA
tstg RL = 50 , VCC 50 V
Refer to the test circuit.
tf
* Pulse test PW 350 µs, duty cycle 2%
hFE CLASSIFICATION
Marking
hFE1
M
2,000 to 5,000
L
4,000 to 10,000
K
8,000 to 20,000
TYPICAL CHARACTERISTICS (Ta = 25°C)
CASE
2SD1481
MIN.
2,000
500
TYP.
MAX.
1.0
20,000
1.5
2.0
0.5
2.0
1.0
Unit
µA
V
V
µs
µs
µs
With infinite heatsink
Case Temperature Tc (°C)
Notes 1. Tc = 25°C
2.
3.
Collector to Emitter Voltage VCE (V)
Case Temperature TC (°C)
Collector to Emitter Voltage VCE (V)
2 Data Sheet D16189EJ1V0DS


Features www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SD1481 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNEC TION) FOR LOW-FREQUENCY POWER AMPLIFIER S AND LOW-SPEED SWITCHING FEATURES • On-chip C-to-B Zener diode for surge v oltage absorption • Low collector sat uration voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) • Ideal for use in a direct drive from IC to the devices such as OA and FA equipment and motor solenoid re lay printer head drivers PACKAGE DRAWI NG (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to ba se voltage Collector to emitter voltage Emitter to base voltage Collector curr ent Collector current Base current Tota l power dissipation Total power dissipa tion Junction temperature Storage tempe rature Symbol VCBO VCEO VEBO IC(DC) IC( pulse)* IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings 60 ±10 60 ±10 7.0 2.0 4.0 0.2 15 1.5 150 −55 to +1 50 Unit V V V A A A W W °C °C * PW 300 µs, duty cycle ≤ 10% (OHFWURGH &RQQHFWLRQ  %DVH  &ROOHFWRU  (PLWWHU.
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