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5LN02M Datasheet, Equivalent, Switching Applications.Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications |
| Part | 5LN02M |
|---|---|
| Description | Ultrahigh-Speed Switching Applications |
| Feature | www. DataSheet4U. com Ordering number:ENN6 130 N-Channel Silicon MOSFET 5LN02M U ltrahigh-Speed Switching Applications F eatures · Low ON resistance. · Ultrah igh-speed switching. · 2. 5V drive. Pa ckage Dimensions unit:mm 2158 [5LN02M] 0. 425 0. 15 3 2. 1 1. 250 0 to 0. 1 0. 4 25 1 2 0. 65 0. 65 2. 0 0. 3 0. 9 0. 6 Sp ecifications Absolute Maximum Ratings a t Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Cu rrent (DC) Drain Current (pulse) Allowa ble Power Dissipation Channel Temperatu re Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cy cle≤1% Conditions 1 . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
| Part | 5LN02M |
|---|---|
| Description | Ultrahigh-Speed Switching Applications |
| Feature | www. DataSheet4U. com Ordering number:ENN6 130 N-Channel Silicon MOSFET 5LN02M U ltrahigh-Speed Switching Applications F eatures · Low ON resistance. · Ultrah igh-speed switching. · 2. 5V drive. Pa ckage Dimensions unit:mm 2158 [5LN02M] 0. 425 0. 15 3 2. 1 1. 250 0 to 0. 1 0. 4 25 1 2 0. 65 0. 65 2. 0 0. 3 0. 9 0. 6 Sp ecifications Absolute Maximum Ratings a t Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Cu rrent (DC) Drain Current (pulse) Allowa ble Power Dissipation Channel Temperatu re Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cy cle≤1% Conditions 1 . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
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