| DatasheetsPDF.com |
5LN02N Datasheet, Equivalent, Switching Applications.Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications |
| Part | 5LN02N |
|---|---|
| Description | Ultrahigh-Speed Switching Applications |
| Feature | www. DataSheet4U. com Ordering number:ENN6 538 N-Channel Silicon MOSFET 5LN02N U ltrahigh-Speed Switching Applications F eatures · Low ON-resistance. · Ultrah igh-speed switching. · 2. 5V drive. Pa ckage Dimensions unit:mm 2178 [5LN02N] 5. 0 4. 0 4. 0 0. 45 0. 5 0. 6 2. 0 5. 0 0. 45 0. 44 1 2 3 14. 0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate -to-Source Voltage Drain Current (DC) D rain Current (pulse) Allowable Power Di ssipation Channel Temperature Storage T emperature Symbol VDSS VGSS ID IDP PD T ch Tstg PW≤10µs, duty cycle≤1% Con ditions 1. 3 1. 3 1 : . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
| Part | 5LN02N |
|---|---|
| Description | Ultrahigh-Speed Switching Applications |
| Feature | www. DataSheet4U. com Ordering number:ENN6 538 N-Channel Silicon MOSFET 5LN02N U ltrahigh-Speed Switching Applications F eatures · Low ON-resistance. · Ultrah igh-speed switching. · 2. 5V drive. Pa ckage Dimensions unit:mm 2178 [5LN02N] 5. 0 4. 0 4. 0 0. 45 0. 5 0. 6 2. 0 5. 0 0. 45 0. 44 1 2 3 14. 0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate -to-Source Voltage Drain Current (DC) D rain Current (pulse) Allowable Power Di ssipation Channel Temperature Storage T emperature Symbol VDSS VGSS ID IDP PD T ch Tstg PW≤10µs, duty cycle≤1% Con ditions 1. 3 1. 3 1 : . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |